Pagina 113 - Prodotti Vishay Siliconix - Transistor - FET, MOSFET - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIR774DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione6.672	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
SI4128BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione15.336	-	-	-	4.5V, 10V	-	-	-	±25V	-	-	-	-	-	-	-
SUP25P10-138-GE3	Vishay Siliconix	MOSFET P-CH 100V 16.3A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 73.5W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione6.672	MOSFET (Metal Oxide)	100V	16.3A (Tc)	6V, 10V	4V @ 250µA	60nC @ 10V	2100pF @ 50V	±20V	-	3.1W (Ta), 73.5W (Tc)	13.8 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SUM50P10-42-E3	Vishay Siliconix	MOSFET P-CH 100V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 18.8W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione13.176	MOSFET (Metal Oxide)	100V	36A (Tc)	4.5V, 10V	3V @ 250µA	160nC @ 10V	4600pF @ 50V	±20V	-	18.8W (Ta), 125W (Tc)	4.2 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM25P10-138-E3	Vishay Siliconix	MOSFET P-CH 100V 16.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione6.768	MOSFET (Metal Oxide)	100V	16.7A (Tc)	6V, 10V	4V @ 250µA	60nC @ 10V	2110pF @ 25V	±20V	-	3.75W (Ta), 88.2W (Tc)	13.8 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB