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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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pacchetto: PowerPAK? SO-8 |
Azione16.632 |
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Vishay Siliconix |
MOSFET N-CH 30V 44.5A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 44.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 12.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (U)
- Package / Case: 10-PolarPAK? (U)
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pacchetto: 10-PolarPAK? (U) |
Azione2.880 |
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Vishay Siliconix |
MOSFET N-CH 8V 4.53A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 2.78W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione5.984 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.264 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione6.128 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.9A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione8.148 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione229.632 |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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pacchetto: PowerPAK? SO-8 |
Azione53.988 |
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Vishay Siliconix |
MOSFET N-CH 20V 3.77A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione194.412 |
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Vishay Siliconix |
MOSFET N-CH 200V 95A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.536 |
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Vishay Siliconix |
MOSFET N-CH 60V 8A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione1.243.044 |
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Vishay Siliconix |
MOSFET N-CH 100V 23A SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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pacchetto: PowerPAK? SO-8 |
Azione3.088 |
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Vishay Siliconix |
MOSFET N-CH 12V MICROFOOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA
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pacchetto: 4-XFBGA |
Azione7.648 |
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Vishay Siliconix |
MOSFET P-CHAN 20V TSOP6S
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione29.424 |
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Vishay Siliconix |
MOSFET N-CH 30V 18A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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pacchetto: PowerPAK? SO-8 |
Azione8.244 |
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Vishay Siliconix |
MOSFET N-CH 600V 26A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 470W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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pacchetto: TO-247-3 |
Azione15.552 |
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Vishay Siliconix |
MOSFET N-CH 1000V 3.1A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione6.416 |
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Vishay Siliconix |
MOSFET N-CH 12V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 6V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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pacchetto: PowerPAK? SO-8 |
Azione22.350 |
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Vishay Siliconix |
MOSFET N-CH 100V 2.6A SOT-363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione53.322 |
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Vishay Siliconix |
MOSFET P-CH 30V 75A TO220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione8.820 |
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Vishay Siliconix |
MOSFET 2N-CH 12V 7.6A PPAK SO-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 7.6A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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pacchetto: PowerPAK? SO-8 Dual |
Azione20.436 |
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Vishay Siliconix |
IC REG LINEAR 2.8V 150MA SC70-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
- Control Features: Enable, Power Good
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SC-70-5
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pacchetto: 5-TSSOP, SC-70-5, SOT-353 |
Azione7.168 |
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Vishay Siliconix |
IC LOAD SWITCH LVL SHIFT 6-TSOP
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.8 V ~ 12 V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): 2.8A
- Rds On (Typ): 50 mOhm
- Input Type: -
- Features: Slew Rate Controlled
- Fault Protection: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione5.232 |
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Vishay Siliconix |
IC SWITCH DUAL SPST TO100-10
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 50 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 300ns, 250ns
- -3db Bandwidth: -
- Charge Injection: 8pC
- Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -74dB @ 500kHz
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: TO-100-10 Metal Can
- Supplier Device Package: TO-100-10
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pacchetto: TO-100-10 Metal Can |
Azione24.444 |
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Vishay Siliconix |
IC SWITCH DUAL SPST 14-DIP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 30 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 130ns
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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pacchetto: 14-DIP (0.300", 7.62mm) |
Azione14.232 |
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Vishay Siliconix |
IC SWITCH DUAL SPST 8DFN
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 4.5 Ohm
- Channel-to-Channel Matching (ΔRon): 200 mOhm
- Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 30ns, 35ns
- -3db Bandwidth: 366MHz
- Charge Injection: 2.2pC
- Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -90dB @ 10MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x2)
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pacchetto: 8-UFDFN Exposed Pad |
Azione5.632 |
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Vishay Siliconix |
IC SWITCH QUAD CMOS 16DIP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 85 Ohm
- Channel-to-Channel Matching (ΔRon): 1.7 Ohm
- Voltage - Supply, Single (V+): 4 V ~ 44 V
- Voltage - Supply, Dual (V±): ±4 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 200ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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pacchetto: 16-DIP (0.300", 7.62mm) |
Azione24.240 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16MINIQFN
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 115 Ohm
- Channel-to-Channel Matching (ΔRon): 700 mOhm
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): ±2.7 V ~ 5 V
- Switch Time (Ton, Toff) (Max): 55ns, 35ns
- -3db Bandwidth: 720MHz
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 2pF, 3pF
- Current - Leakage (IS(off)) (Max): 100pA
- Crosstalk: -90dB @ 10MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-WFQFN
- Supplier Device Package: 16-miniQFN (1.8x2.6)
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pacchetto: 16-WFQFN |
Azione23.118 |
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Vishay Siliconix |
IC SWITCH QUAD SPDT 20SOIC
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 1
- On-State Resistance (Max): 45 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm (Max)
- Voltage - Supply, Single (V+): 5 V ~ 40 V
- Voltage - Supply, Dual (V±): ±4 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 175ns, 145ns
- -3db Bandwidth: -
- Charge Injection: 10pC
- Channel Capacitance (CS(off), CD(off)): 8pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -80dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOIC
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pacchetto: 20-SOIC (0.295", 7.50mm Width) |
Azione16.776 |
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Vishay Siliconix |
IC MULTIPLEXER DUAL 4X2 16TSSOP
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
- Voltage - Supply, Single (V+): 5 V ~ 36 V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 150ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 20pC
- Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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pacchetto: 16-TSSOP (0.173", 4.40mm Width) |
Azione26.754 |
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