Alliance - High-speed monolithic low-voltage CMOS DDR3L SDRAM (AS4C512M16D3L) | Heisener Electronics
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Alliance - High-speed monolithic low-voltage CMOS DDR3L SDRAM (AS4C512M16D3L)

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Data di Pubblicazione: 2015-11-24
The Alliance's new single-chip high-speed, low-voltage CMOS dual-data-rate tri-synchronous DRAM (DDR3L SDRAM), available in 96-ball, 9mm x 14mm lead-free (FB) packages, is now available. MSC. AS4C512M16D3L (512M x 16) adopts advanced silicon provided by Micron Technology, providing a double data rate architecture, which can achieve extremely high transmission rates up to 1600 Mbps / pin and a clock rate of 800MHz. Single-chip 8Gb DDR3L SDRAM with minimal chip shrinkage, providing a reliable plug-in, pin-to-pin compatible alternative to those used in industrial, medical, networking, telecommunications, and aerospace applications-without the need for costly re-engineering Design and part requalification. For users who need to add memory but are facing board space constraints, this 8Gb DDR3 is a reasonable choice. AS4C512M16D3L is powered by a single 1.35V power supply, with a commercial temperature range of 0C to + 95C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40C to + 95C (AS4C512M16D3L-12BIN). The device is internally configured as eight 512M x 16-bit memory banks.