Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3
|
pacchetto: TO-251-3 Stub Leads, IPak |
Azione36.012 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | ±20V | - | 94W (Tc) | 3.1 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET N-CH 40V 9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione187.104 |
|
MOSFET (Metal Oxide) | 40V | 9A (Ta) | 4.5V, 10V | 3V @ 250µA | 23nC @ 4.5V | 2000pF @ 20V | ±20V | - | 2.5W (Ta) | 17 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 20A TO262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.416 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 74nC @ 10V | 3440pF @ 100V | ±30V | - | 463W (Tc) | 250 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 9A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.576 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 2V @ 250µA | 11nC @ 10V | 560pF @ 15V | ±25V | - | 3.1W (Ta) | 19 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 70A TO-3P
|
pacchetto: TO-3P-3, SC-65-3 |
Azione6.800 |
|
MOSFET (Metal Oxide) | 200V | 70A (Ta) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20A 8-DFN
|
pacchetto: 8-PowerSMD, Flat Leads |
Azione4.848 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta), 26A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28nC @ 10V | 1452pF @ 15V | ±12V | - | 3.1W (Ta), 35W (Tc) | 12.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
Microsemi Corporation |
MOSFET N-CH 500V 20A TO-247
|
pacchetto: TO-247-3 |
Azione3.376 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 500µA | 75nC @ 10V | 2950pF @ 25V | ±30V | - | 290W (Tc) | 300 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 48A ISOTOP
|
pacchetto: ISOTOP |
Azione3.328 |
|
MOSFET (Metal Oxide) | 650V | 48A | 10V | 5V @ 250µA | 134nC @ 10V | 3800pF @ 25V | ±30V | - | 450W (Tc) | 110 mOhm @ 22.5A, 10V | 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
||
Nexperia USA Inc. |
MOSFET N-CH 200V 39A TO220AB
|
pacchetto: TO-220-3 |
Azione4.544 |
|
MOSFET (Metal Oxide) | 200V | 39A (Tc) | 10V | 4V @ 1mA | 96nC @ 10V | 3750pF @ 25V | ±20V | - | 250W (Tc) | 57 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 14A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.080 |
|
MOSFET (Metal Oxide) | 30V | 14.5A (Ta), 124A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 40nC @ 4.5V | 4490pF @ 12V | ±20V | - | 1.43W (Ta), 107W (Tc) | 4 mOhm @ 30A, 11.5V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 70A TO252
|
pacchetto: - |
Azione5.856 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -30V,
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione3.072 |
|
MOSFET (Metal Oxide) | 30V | 4.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.6nC @ 4.5V | 560pF @ 15V | ±20V | - | 2.1W (Tc) | 60 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 0.9A DFN1006B-3
|
pacchetto: 3-XFDFN |
Azione5.824 |
|
MOSFET (Metal Oxide) | 30V | 900mA (Ta) | 1.8V, 4.5V | 1.05V @ 250µA | 1.16nC @ 15V | 78pF @ 25V | ±8V | - | 360mW (Ta), 2.7W (Tc) | 490 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006B (0.6x1) | 3-XFDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione36.000 |
|
MOSFET (Metal Oxide) | 40V | 3.9A (Ta) | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 540pF @ 20V | ±20V | - | 1.25W (Ta) | 45 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 150A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione13.272 |
|
MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | ±20V | - | 140W (Tc) | 3.8 mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 100A 8TDSON
|
pacchetto: 8-PowerTDFN |
Azione3.216 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 3.3V @ 41µA | 41nC @ 10V | 3000pF @ 30V | ±20V | - | 2.5W (Ta), 74W (Tc) | 3.4 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 35A TO-3PN
|
pacchetto: TO-3P-3, SC-65-3 |
Azione103.716 |
|
MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 5V @ 250µA | 181nC @ 10V | 6640pF @ 25V | ±30V | - | 312.5W (Tc) | 98 mOhm @ 17.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 11A TO-220
|
pacchetto: TO-220-3 Full Pack |
Azione10.116 |
|
MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | ±20V | - | 33W (Tc) | 380 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 0.2A SOT-223
|
pacchetto: TO-261-4, TO-261AA |
Azione2.624 |
|
MOSFET (Metal Oxide) | 800V | 200mA (Tc) | 10V | 5V @ 250µA | 7.2nC @ 10V | 195pF @ 25V | ±30V | - | 2.1W (Tc) | 20 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET P-CH 200V 3.8A 1212-8
|
pacchetto: PowerPAK? 1212-8 |
Azione779.748 |
|
MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 6V, 10V | 4V @ 250µA | 25nC @ 10V | 666pF @ 50V | ±20V | - | 3.7W (Ta), 52W (Tc) | 1.05 Ohm @ 1A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Vishay Siliconix |
MOSFET N-CH 600V 15A TO247AC
|
pacchetto: TO-247-3 |
Azione10.380 |
|
MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1350pF @ 100V | ±30V | - | 180W (Tc) | 280 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 80V TO220AB
|
pacchetto: TO-220-3 |
Azione33.804 |
|
MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 4V @ 1mA | 52nC @ 10V | 3346pF @ 40V | ±20V | - | 170W (Tc) | 8.7 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC
|
pacchetto: TO-247-3 |
Azione20.916 |
|
MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 4500pF @ 25V | ±20V | - | 230W (Tc) | 14 mOhm @ 54A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 42A TO-247
|
pacchetto: TO-247-3 |
Azione13.728 |
|
MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 3060pF @ 100V | ±25V | - | 300W (Tc) | 70 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 90A TO-247AC
|
pacchetto: TO-247-3 |
Azione6.528 |
|
MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 4V @ 250µA | 270nC @ 10V | 7500pF @ 25V | ±20V | - | 310W (Tc) | 4.5 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 150V 50A TO252-3
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione55.086 |
|
MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | ±20V | - | 150W (Tc) | 20 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 80V 12A DIRECTFET
|
pacchetto: DirectFET? Isometric MN |
Azione148.704 |
|
MOSFET (Metal Oxide) | 80V | 12A (Ta), 68A (Tc) | 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 9.5 mOhm @ 12A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MN | DirectFET? Isometric MN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione563.184 |
|
MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Vishay Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione31.044 |
|
MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | ±20V | - | 5.2W (Ta), 83W (Tc) | 41 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
ON Semiconductor |
MOSFET P-CH 30V 25A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione451.212 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4V, 5V | 2V @ 250µA | 20nC @ 5V | 1260pF @ 25V | ±15V | - | 75W (Tj) | 80 mOhm @ 25A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |