Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 48A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.000 |
|
MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 5.5V @ 250µA | 89nC @ 10V | 3430pF @ 25V | ±20V | - | 140W (Tc) | 25 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 25A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.064 |
|
MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 2.2V @ 20µA | 47nC @ 10V | 2260pF @ 25V | ±16V | - | 50W (Tc) | 21.6 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione39.240 |
|
MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | ±20V | - | 92W (Tc) | 26.5 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.696 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 33nC @ 10V | 1229pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 23A TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione7.584 |
|
MOSFET (Metal Oxide) | 40V | 23A (Ta), 70A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 60nC @ 10V | 4300pF @ 20V | ±20V | - | 2.7W (Ta), 150W (Tc) | 3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Renesas Electronics America |
MOSFET N-CH 40V 60A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.160 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 5100pF @ 25V | ±20V | - | 1.8W (Ta), 88W (Tc) | 6.1 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 25V 78A TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione41.520 |
|
MOSFET (Metal Oxide) | 25V | 78A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 66nC @ 10V | 2490pF @ 12V | ±20V | - | 10.7W (Ta), 65W (Tc) | 6.2 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 25V 23A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.552 |
|
MOSFET (Metal Oxide) | 25V | 23A (Ta) | 4.5V, 10V | 2V @ 250µA | 3.76nC @ 4.5V | 225pF @ 20V | ±20V | - | 37.5W (Tj) | 45 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
NXP |
MOSFET N-CH 25V 75A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.408 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 26.7nC @ 5V | 2200pF @ 25V | ±20V | - | 115W (Tc) | 4.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB
|
pacchetto: TO-220-3 |
Azione5.520 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 12 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 29A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.048 |
|
MOSFET (Metal Oxide) | 60V | 29A (Tc) | 4.5V, 10V | 3V @ 250µA | 28nC @ 10V | 900pF @ 25V | ±16V | - | 75W (Tc) | 35 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 9.3A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.936 |
|
MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 4V @ 250µA | 7.7nC @ 10V | 250pF @ 25V | ±25V | - | 3.75W (Ta), 40W (Tc) | 210 mOhm @ 4.65A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET N-CH 240V 0.26A TO92-3
|
pacchetto: E-Line-3 |
Azione5.424 |
|
MOSFET (Metal Oxide) | 240V | 260mA (Ta) | 2.5V, 10V | 1.8V @ 1mA | - | 200pF @ 25V | ±40V | - | 750mW (Ta) | 5.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 4.1A SC75-6
|
pacchetto: SC75-6 FLMP |
Azione198.000 |
|
MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 780pF @ 10V | ±8V | - | 1.6W (Ta) | 60 mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC75-6 FLMP | SC75-6 FLMP |
||
STMicroelectronics |
MOSFET N-CH 200V 75A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.000 |
|
MOSFET (Metal Oxide) | 200V | 75A (Tc) | 10V | 4V @ 250µA | 84nC @ 10V | 3260pF @ 25V | ±20V | - | 190W (Tc) | 34 mOhm @ 37A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 800V 19A TO-247
|
pacchetto: TO-247-3 |
Azione111.264 |
|
MOSFET (Metal Oxide) | 800V | 19A (Tc) | 10V | 4.5V @ 150µA | 250nC @ 10V | 6100pF @ 25V | ±30V | - | 350W (Tc) | 380 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 300A D2PAK-7P
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione3.520 |
|
MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 160nC @ 4.5V | 11270pF @ 50V | ±16V | - | 380W (Tc) | 1.9 mOhm @ 180A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3-1
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.560 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.2V @ 35µA | 60nC @ 10V | 4690pF @ 25V | +20V, -16V | - | 71W (Tc) | 4.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 20V 7.5A 6TSOP
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione3.344 |
|
MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 2.5V, 4.5V | 1.2V @ 30µA | 8.7nC @ 10V | 1147pF @ 10V | ±12V | - | 2W (Ta) | 22 mOhm @ 7.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP6-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Honeywell Microelectronics & Precision Sensors |
MOSFET N-CH 55V 8-DIP
|
pacchetto: 8-CDIP Exposed Pad |
Azione4.192 |
|
MOSFET (Metal Oxide) | 55V | - | 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 10V | - | 50W (Tj) | 400 mOhm @ 100mA, 5V | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP-EP | 8-CDIP Exposed Pad |
||
IXYS |
MOSFET N-CH 100V 140A TO-268
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione4.928 |
|
MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V | 5V @ 4mA | 155nC @ 10V | 4700pF @ 25V | ±20V | - | 600W (Tc) | 11 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-220AB
|
pacchetto: TO-220-3 |
Azione74.532 |
|
MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 3.7 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN
|
pacchetto: 8-PowerTDFN |
Azione7.776 |
|
MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 3V @ 250µA | 6.8nC @ 10V | 3980pF @ 25V | ±16V | - | 3.8W (Ta), 165W (Tc) | 5.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 600V 114A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.304 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 26nC @ 10V | 790pF @ 50V | ±25V | - | 114W (Tc) | 360 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microchip Technology |
MOSFET N-CH 350V 365MA SOT89-3
|
pacchetto: TO-243AA |
Azione7.568 |
|
MOSFET (Metal Oxide) | 350V | 365mA (Tj) | 3V, 10V | 2.5V @ 1mA | - | 200pF @ 25V | ±20V | - | 1.6W (Ta) | 6 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
||
ON Semiconductor |
MOSFET N-CH 30V 76A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.656 |
|
MOSFET (Metal Oxide) | 30V | 11.3A (Ta), 79A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 23nC @ 4.5V | 2142pF @ 12V | ±20V | - | 1.4W (Ta), 68W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 24A TO220
|
pacchetto: TO-220-2 Full Pack |
Azione8.952 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 4V @ 1mA | 70nC @ 10V | 1650pF @ 25V | ±20V | - | 40W (Tc) | 165 mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Rohm Semiconductor |
MOSFET P-CH 12V 2.5A WEMT6
|
pacchetto: SOT-563, SOT-666 |
Azione185.280 |
|
MOSFET (Metal Oxide) | 12V | 2.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 16nC @ 4.5V | 2000pF @ 6V | -8V | - | 400mW (Ta) | 62 mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 1A TUMT5
|
pacchetto: 6-SMD (5 Leads), Flat Lead |
Azione98.904 |
|
MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | 150pF @ 10V | ±12V | Schottky Diode (Isolated) | 1W (Ta) | 390 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | TUMT5 | 6-SMD (5 Leads), Flat Lead |
||
Infineon Technologies |
MOSFET N-CH 150V 83A TO220-3
|
pacchetto: TO-220-3 |
Azione6.784 |
|
MOSFET (Metal Oxide) | 150V | 83A (Tc) | 8V, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | ±20V | - | 214W (Tc) | 11.1 mOhm @ 83A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |