Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 25V 40A PQFN
|
pacchetto: 8-PowerTDFN |
Azione6.000 |
|
MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 2.1V @ 35µA | 20nC @ 10V | 1270pF @ 13V | ±20V | - | 2.7W (Ta), 29W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 25V 50A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione72.000 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | ±20V | - | 83W (Tc) | 5.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione4.752 |
|
MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 1.8V @ 400µA | 17nC @ 10V | 368pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 28V 11.4A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione30.960 |
|
MOSFET (Metal Oxide) | 28V | 11A (Ta) | 4.5V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | ±12V | - | 2.5W (Ta) | 10 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-254-3, TO-254AA (Straight Leads) |
Azione6.880 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 515 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
Vishay Siliconix |
MOSFET N-CH 30V 4.2A 6TSOP
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione411.300 |
|
MOSFET (Metal Oxide) | 30V | 4.2A (Tc) | 4.5V, 10V | 3V @ 250µA | 10.6nC @ 10V | 305pF @ 15V | ±20V | - | 1.25W (Ta), 1.5W (Tc) | 50 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
IXYS |
MOSFET N-CH 1200V 90A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.184 |
|
MOSFET (Metal Oxide) | 1200V | 90A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione148.908 |
|
MOSFET (Metal Oxide) | 60V | 9A (Ta) | 6V, 10V | 2V @ 250µA (Min) | 70nC @ 10V | - | ±20V | - | 1.85W (Ta) | 11 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 8A TO-3P
|
pacchetto: TO-3P-3, SC-65-3 |
Azione7.488 |
|
MOSFET (Metal Oxide) | 900V | 8A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 2080pF @ 25V | ±30V | - | 240W (Tc) | 1.9 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB
|
pacchetto: TO-220-3 |
Azione60.228 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 109nC @ 20V | 1775pF @ 25V | ±20V | - | 175W (Tc) | 14 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.624 |
|
MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 4.5V @ 430µA | 25.5nC @ 10V | 1190pF @ 100V | ±20V | - | 104W (Tc) | 280 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 900V 12A TO-268
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione2.928 |
|
MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | ±20V | - | 300W (Tc) | 900 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Sanken |
MOSFET N-CH 100V 18A TO-220F
|
pacchetto: TO-220-3 Full Pack |
Azione3.504 |
|
MOSFET (Metal Oxide) | 100V | 18A (Tc) | 4.5V, 10V | 2.5V @ 350µA | 23nC @ 10V | 1530pF @ 25V | ±20V | - | 32W (Tc) | 48 mOhm @ 11.9A, 10V | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 80V 160A TO263-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Azione79.962 |
|
MOSFET (Metal Oxide) | 80V | 160A (Tc) | 6V, 10V | 3.5V @ 155µA | 117nC @ 10V | 8110pF @ 40V | ±20V | - | 214W (Tc) | 3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Rohm Semiconductor |
MOSFET N-CH 30V 9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione231.108 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 2.5V @ 1mA | 15nC @ 5V | 810pF @ 10V | 20V | - | 2W (Ta) | 15 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 75V 170A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.528 |
|
MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | ±20V | - | 300W (Tc) | 4.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 250V 110A TO-247
|
pacchetto: TO-247-3 |
Azione6.048 |
|
MOSFET (Metal Oxide) | 250V | 110A (Tc) | 10V | 4.5V @ 1mA | 157nC @ 10V | 9400pF @ 25V | ±20V | - | 694W (Tc) | 24 mOhm @ 55A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8SOP
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 7.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 21 nC @ 5 V | 1900 pF @ 10 V | ±20V | - | 2W (Ta) | 21mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TSO
|
pacchetto: - |
Azione17.007 |
|
MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 300µA | 24 nC @ 10 V | 1855 pF @ 50 V | ±20V | - | 630mW (Ta), 104W (Tc) | 11.5mOhm @ 20A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
HIGH-SPEED SWITCHING NCH 800V 1.
|
pacchetto: - |
Azione1.218 |
|
MOSFET (Metal Oxide) | 800 V | 1.6A (Ta) | 10V | 4.5V @ 150µA | 7.5 nC @ 10 V | 140 pF @ 100 V | ±20V | - | 30W (Tc) | 4.2Ohm @ 800mA, 10V | 150°C (TJ) | Surface Mount | TO-252GE | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 7.6A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 600 pF @ 25 V | ±20V | - | 2.5W (Ta), 32W (Tc) | 300mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER SWITCHING MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
SemiQ |
SIC MOSFET 1200V 80M TO-247-4L
|
pacchetto: - |
Azione279 |
|
SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 4V @ 10mA | 61 nC @ 20 V | 1377 pF @ 1000 V | +25V, -10V | - | 188W (Tc) | 100mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Infineon Technologies |
SIC_DISCRETE
|
pacchetto: - |
Azione120 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 55A (Tc) | 18V, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | 1264 pF @ 800 V | +23V, -5V | - | 268W (Tc) | 50mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-11 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 600V 12A TO263-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 4.5V @ 250µA | 23 nC @ 10 V | 1015 pF @ 400 V | ±20V | - | 64W (Tc) | 210mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Goford Semiconductor |
P-100V, 3.5A,RD<200M@-10V,VTH1V~
|
pacchetto: - |
Azione11.565 |
|
MOSFET (Metal Oxide) | 100 V | 3.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23 nC @ 10 V | 1653 pF @ 50 V | ±20V | - | 3.1W (Tc) | 200mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET N CH 40V 19A/74A 8WDFN
|
pacchetto: - |
Request a Quote |
|
- | - | 19A (Ta), 74A (Tc) | - | 2V @ 40µA | - | - | - | - | - | 4.8mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Renesas Electronics Corporation |
POWER TRS2
|
pacchetto: - |
Azione15.000 |
|
MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4V @ 250µA | 83 nC @ 10 V | 5300 pF @ 25 V | ±20V | - | 1W (Ta), 138W (Tc) | 4.5mOhm @ 38A, 10V | 175°C | Surface Mount | 8-HSON (5x5.4) | 8-PowerLDFN |
||
onsemi |
MOSFET N-CH 650V 20A TO220FP
|
pacchetto: - |
Azione2.925 |
|
MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 5V @ 430µA | 34 nC @ 10 V | 1610 pF @ 400 V | ±30V | - | 36W (Tc) | 190mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |