Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 9.4A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.896 |
|
MOSFET (Metal Oxide) | 100V | 9.4A (Ta) | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | - | 48W (Tc) | 210 mOhm @ 5.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 20V 100A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.720 |
|
MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | - | 2.5W (Ta), 120W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 23A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione184.824 |
|
MOSFET (Metal Oxide) | 30V | 23A (Tc) | 4.5V, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | ±16V | - | 45W (Tc) | 45 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET P-CH 30V 7A MICRO8
|
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Azione210.588 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 69nC @ 10V | 2204pF @ 25V | ±20V | - | 1.79W (Ta) | 26 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Infineon Technologies |
MOSFET P-CH 30V 2A MICRO8
|
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Azione7.312 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | ±20V | Schottky Diode (Isolated) | 1.25W (Ta) | 200 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Renesas Electronics America |
MOSFET N-CH 30V 90A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione9.660 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135nC @ 10V | 7500pF @ 25V | ±20V | - | 1.2W (Ta), 105W (Tc) | 3.2 mOhm @ 45A, 10V | 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NXP |
MOSFET N-CH 20V 5.9A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione6.976 |
|
MOSFET (Metal Oxide) | 20V | 5.9A (Tc) | 2.5V, 4.5V | 1.5V @ 1mA | 5.8nC @ 4.5V | 410pF @ 20V | ±12V | - | 280mW (Tj) | 37 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 500V 18A TO-220
|
pacchetto: TO-220-3 |
Azione4.080 |
|
MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1950pF @ 25V | ±25V | - | 140W (Tc) | 190 mOhm @ 9A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 55A TO-264AA
|
pacchetto: TO-264-3, TO-264AA |
Azione4.832 |
|
MOSFET (Metal Oxide) | 500V | 55A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS264? | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 250V 100A TO-264AA
|
pacchetto: TO-264-3, TO-264AA |
Azione2.416 |
|
MOSFET (Metal Oxide) | 250V | 100A (Tc) | 10V | 4V @ 8mA | 300nC @ 10V | 9100pF @ 25V | ±20V | - | 560W (Tc) | 27 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 14A TO-247
|
pacchetto: TO-247-3 |
Azione3.840 |
|
MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 4.5V @ 250µA | 170nC @ 10V | 4500pF @ 25V | ±20V | - | 300W (Tc) | 700 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 2X2 4-MFP
|
pacchetto: 4-XFBGA, CSPBGA |
Azione1.200.000 |
|
MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 17nC @ 4.5V | - | ±12V | - | 1.47W (Ta) | 65 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 4A TO251A
|
pacchetto: TO-251-3 Stub Leads, IPak |
Azione78.672 |
|
MOSFET (Metal Oxide) | 60V | 4A (Ta), 12A (Tc) | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 540pF @ 30V | ±20V | - | 2.1W (Ta), 20W (Tc) | 60 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacchetto: 8-PowerTDFN |
Azione2.560 |
|
MOSFET (Metal Oxide) | 30V | 73A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14.4nC @ 10V | 843pF @ 15V | ±20V | - | 69W (Tc) | 8 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 200V 16A TO220
|
pacchetto: TO-220-2 Full Pack |
Azione24.360 |
|
MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 5.25V @ 1mA | 26nC @ 10V | 1370pF @ 25V | ±30V | - | 2.23W (Ta), 40W (Tc) | 180 mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 650V 76A TO247
|
pacchetto: TO-247-3 |
Azione7.704 |
|
MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 5V @ 7.6mA | 298nC @ 10V | 12560pF @ 100V | ±20V | Super Junction | 595W (Tc) | 41 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 8.8A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione269.532 |
|
MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 280 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 30V 10.9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.658.396 |
|
MOSFET (Metal Oxide) | 30V | 10.9A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 12nC @ 10V | 435pF @ 15V | ±20V | - | 2.4W (Ta), 5W (Tc) | 24 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
P-CHANNEL MOSFET, SOT-23-3L
|
pacchetto: - |
Azione9.570 |
|
MOSFET (Metal Oxide) | 30 V | 4.3A | 2.5V, 10V | 3V @ 250µA | - | 700 pF @ 15 V | ±20V | - | 1.5W | 60mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
TRENCH 40<-<100V PG-TO220-3
|
pacchetto: - |
Azione2.232 |
|
MOSFET (Metal Oxide) | 60 V | 33A (Ta), 185A (Tc) | 6V, 10V | 3.3V @ 129µA | 162 nC @ 10 V | 7300 pF @ 30 V | ±20V | - | 3.8W (Ta), 188W (Tc) | 1.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 20V TSOT26
|
pacchetto: - |
Azione3.483 |
|
MOSFET (Metal Oxide) | 20 V | 5.5A (Ta), 13A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 8.6 nC @ 4.5 V | 834 pF @ 10 V | ±12V | - | 1.2W (Ta) | 38mOhm @ 8.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
onsemi |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diotec Semiconductor |
MOSFET, DPAK, 650V, 5.7A, 150C,
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 5.7A (Tc) | 10V | 4V @ 250µA | 18.4 nC @ 10 V | 722 pF @ 325 V | ±30V | - | 36W (Tc) | 430mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
CMOS IMAGE SENSOR SYSTEM-ON-CHIP
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET P-CH 40V 10.8A 8SOIC
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 10.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 49 nC @ 10 V | 2670 pF @ 20 V | ±20V | - | 2.5W (Ta) | 13mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
SICFET N-CH 1200V 600A MODULE
|
pacchetto: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 600A (Tc) | - | 5.6V @ 182mA | - | 28000 pF @ 10 V | +22V, -4V | - | 2460W (Tc) | - | 175°C (TJ) | Chassis Mount | Module | Module |
||
onsemi |
NFET DPAK 250V 1.0R
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 900V 11A TO220
|
pacchetto: - |
Azione1.455 |
|
MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 3.5V @ 740µA | 68 nC @ 10 V | 1700 pF @ 100 V | ±20V | - | 34W (Tc) | 500mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
IXYS |
DISCMSFT NCHULTRJNCTN X3CLASS TO
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 170A (Tc) | 10V | 4.5V @ 4mA | 122 nC @ 10 V | 7620 pF @ 25 V | ±20V | - | 520W (Tc) | 6.7mOhm @ 85A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |