Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione62.388 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1380pF @ 25V | ±20V | - | 110W (Tc) | 14.5 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 25V 35A TDSON-8
|
pacchetto: 8-PowerTDFN |
Azione3.920 |
|
MOSFET (Metal Oxide) | 25V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 2V @ 25µA | 14nC @ 5V | 1800pF @ 15V | ±20V | - | 2.8W (Ta), 52W (Tc) | 8.5 mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
NXP |
MOSFET N-CH 30V 120A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.360 |
|
MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 4V @ 1mA | 130nC @ 10V | 9580pF @ 25V | ±20V | - | 324W (Tc) | 1.45 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 60V 96A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione7.984 |
|
MOSFET (Metal Oxide) | 60V | 96A (Tc) | 4.5V, 10V | 3V @ 250µA | 144nC @ 10V | 5800pF @ 25V | ±20V | - | 136W (Tc) | 7.4 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 75V 220A TO-220
|
pacchetto: TO-220-3 |
Azione7.408 |
|
MOSFET (Metal Oxide) | 75V | 220A (Tc) | 10V | 4V @ 250µA | 165nC @ 10V | 7700pF @ 25V | ±20V | - | 480W (Tc) | 4.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 20A TO220FP
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione14.256 |
|
MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4V, 5V | 2V @ 250µA | 35nC @ 5V | 1600pF @ 25V | ±10V | - | 42W (Tc) | 50 mOhm @ 12A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
STMicroelectronics |
MOSFET N-CH 40V 80A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione120.012 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 2200pF @ 25V | ±20V | - | 110W (Tc) | 6.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 700V COOLMOS TO220-3
|
pacchetto: TO-220-3 Full Pack |
Azione3.888 |
|
MOSFET (Metal Oxide) | 700V | 7.4A (Tc) | 10V | 3.5V @ 150µA | 15.3nC @ 10V | 328pF @ 100V | ±20V | - | 68W (Tc) | 950 mOhm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO252 | TO-220-3 Full Pack |
||
Infineon Technologies |
CONSUMER
|
pacchetto: - |
Azione2.224 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 900V 12A TO-247
|
pacchetto: TO-247-3 |
Azione3.696 |
|
MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 6.5V @ 1mA | 56nC @ 10V | 3080pF @ 25V | ±30V | - | 380W (Tc) | 900 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 40V 340A
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.736 |
|
MOSFET (Metal Oxide) | 40V | 340A (Tc) | 10V | 4V @ 250µA | 256nC @ 10V | 13000pF @ 25V | ±15V | - | 480W (Tc) | 1.7 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
SUPERFET3 650V 250 MOHM, TO220F
|
pacchetto: - |
Azione6.400 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 600V 3A D2-PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.400 |
|
MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 5.5V @ 50µA | 9.8nC @ 10V | 411pF @ 25V | ±30V | - | 70W (Tc) | 2.9 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Azione2.096 |
|
MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 1W (Tc) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
Nexperia USA Inc. |
MOSFET N-CH 80V 24A LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione4.848 |
|
MOSFET (Metal Oxide) | 80V | 24A (Tc) | 5V, 10V | 2.1V @ 1mA | 11.9nC @ 5V | 1570pF @ 25V | ±10V | - | 64W (Tc) | 41 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Diodes Incorporated |
MOSFET P-CH 12V 4A SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione2.288 |
|
MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 15.8nC @ 4.5V | 1357pF @ 10V | ±8V | - | 800mW (Ta) | 31 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
MOSFET N-CH 500V 55A PLUS247
|
pacchetto: TO-247-3 |
Azione9.948 |
|
MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 5.5V @ 8mA | 195nC @ 10V | 6700pF @ 25V | ±20V | - | 560W (Tc) | 85 mOhm @ 27.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A TO-220SIS
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione6.924 |
|
MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | ±30V | - | 30W (Tc) | 1 Ohm @ 2.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
STMicroelectronics |
MOSFET N-CH 800V 4.5A 8PWRFLAT
|
pacchetto: 8-PowerVDFN |
Azione4.176 |
|
MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 5V @ 100µA | 16.5nC @ 10V | 450pF @ 100V | ±30V | - | 42W (Tc) | 950 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 40V 90A ATPAK
|
pacchetto: ATPAK (2 leads+tab) |
Azione7.136 |
|
MOSFET (Metal Oxide) | 40V | 90A (Ta) | 4.5V, 10V | - | 83nC @ 10V | 4510pF @ 20V | ±20V | - | 60W (Tc) | 6 mOhm @ 45A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
||
Diodes Incorporated |
MOSFET N-CH 40V 16.8A TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.880 |
|
MOSFET (Metal Oxide) | 40V | 16.8A (Ta), 70A (Tc) | 4.5V, 10V | 3V @ 250µA | 29.1nC @ 10V | 1895pF @ 30V | ±20V | - | 2.6W (Ta) | 7.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 50A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.072 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 4V @ 250µA | 34.5nC @ 10V | 1715pF @ 25V | ±20V | - | 75W (Tc) | 4.1 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 14A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione138.492 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | - | 2.5W (Ta), 42W (Tc) | 100 mOhm @ 8.4A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 80V 4.6A TSOP-6
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione36.180 |
|
MOSFET (Metal Oxide) | 80V | 4.6A (Tc) | 4.5V, 10V | 3V @ 250µA | 7.5nC @ 10V | 195pF @ 40V | ±20V | - | 2W (Ta), 3.6W (Tc) | 93 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Infineon Technologies |
MOSFET N-CH 100V 97A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione396.936 |
|
MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | ±20V | - | 230W (Tc) | 9 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 50A TO247-4
|
pacchetto: TO-247-4 |
Azione6.156 |
|
MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 4V @ 1.24mA | 107nC @ 10V | 4340pF @ 400V | ±20V | - | 227W (Tc) | 40 mOhm @ 24.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.2A
|
pacchetto: 6-SMD, Flat Leads |
Azione24.714 |
|
MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.5V, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | ±10V | - | 500mW (Ta) | 28 mOhm @ 3A, 4V | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
||
Vishay Siliconix |
MOSFET N-CH 400V 2A TO-220AB
|
pacchetto: TO-220-3 |
Azione318.132 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | ±20V | - | 36W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.47A SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione24.438 |
|
MOSFET (Metal Oxide) | 60V | 470mA (Ta) | 3V, 5V | 2V @ 1mA | 0.74nC @ 5V | 12.9pF @ 12V | ±12V | - | 390mW (Ta) | 1.8 Ohm @ 150mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 2A SOT23F
|
pacchetto: SOT-23-3 Flat Leads |
Azione141.906 |
|
MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 2V @ 1mA | 8.3nC @ 10V | 330pF @ 10V | +10V, -20V | - | 1W (Ta) | 300 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |