Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX
|
pacchetto: DirectFET? Isometric MX |
Azione6.096 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 3.9V @ 150µA | 212nC @ 10V | 6852pF @ 25V | ±20V | - | 96W (Tc) | 1.4 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 60V 57A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.184 |
|
MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | ±20V | - | 92W (Tc) | 12 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 5.6A MICRO8
|
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Azione119.100 |
|
MOSFET (Metal Oxide) | 30V | 5.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | ±20V | - | 1.8W (Ta) | 35 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 50A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione6.624 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2800pF @ 15V | ±20V | - | 94W (Tc) | 6.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione3.200 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | ±16V | - | 80W (Tc) | 13.5 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 20V 49A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione7.920 |
|
MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | ±20V | - | 40W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH TO268
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione3.392 |
|
MOSFET (Metal Oxide) | 200V | 58A (Tc) | 10V | 4V @ 4mA | 140nC @ 10V | 3600pF @ 25V | ±20V | - | 300W (Tc) | 40 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 (IXFT) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
ON Semiconductor |
MOSFET N-CH 60V 35A ATPAK
|
pacchetto: ATPAK (2 leads+tab) |
Azione15.840 |
|
- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
||
Microsemi Corporation |
MOSFET N-CH TO-254AA
|
pacchetto: TO-254-3, TO-254AA (Straight Leads) |
Azione2.256 |
|
MOSFET (Metal Oxide) | 400V | 14A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 415 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
Renesas Electronics America |
MOSFET N-CH 30V 90A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione9.660 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135nC @ 10V | 7500pF @ 25V | ±20V | - | 1.2W (Ta), 105W (Tc) | 3.2 mOhm @ 45A, 10V | 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Renesas Electronics America |
MOSFET N-CH 80V 30A LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione6.564 |
|
MOSFET (Metal Oxide) | 80V | 30A (Ta) | 4.5V, 10V | - | 28nC @ 4.5V | 4150pF @ 10V | ±20V | - | 55W (Tc) | 12 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
||
Vishay Siliconix |
MOSFET P-CH 20V 6.2A 8-TSSOP
|
pacchetto: 8-TSSOP (0.173", 4.40mm Width) |
Azione5.312 |
|
MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 70nC @ 5V | - | ±8V | - | 1.08W (Ta) | 12.5 mOhm @ 9.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 18A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione841.284 |
|
MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1155pF @ 25V | ±30V | - | 3.8W (Ta), 82W (Tc) | 140 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 85V 180A TO-263-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Azione5.488 |
|
MOSFET (Metal Oxide) | 85V | 180A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 7500pF @ 25V | ±20V | - | 430W (Tc) | 5.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 16A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.768 |
|
MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 4V @ 250µA | 39nC @ 20V | 570pF @ 25V | ±20V | - | 64W (Tc) | 90 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 300V 3.2A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.000 |
|
MOSFET (Metal Oxide) | 300V | 3.2A (Tc) | 10V | 5V @ 250µA | 7nC @ 10V | 230pF @ 25V | ±30V | - | 3.13W (Ta), 55W (Tc) | 2.2 Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 5.8A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione4.832 |
|
MOSFET (Metal Oxide) | 100V | 5.8A (Tc) | 5V, 10V | 2V @ 250µA | 6nC @ 5V | 290pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 350 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 900V 5.7A TO-247
|
pacchetto: TO-247-3 |
Azione6.432 |
|
MOSFET (Metal Oxide) | 900V | 5.7A (Tc) | 10V | 3.5V @ 370µA | 34nC @ 10V | 850pF @ 100V | ±20V | - | 89W (Tc) | 1 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 24A PQFN
|
pacchetto: 8-PowerVDFN |
Azione7.264 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta), 76A (Tc) | 4.5V, 10V | 2.35V @ 50µA | 30nC @ 4.5V | 3100pF @ 15V | ±20V | - | 3.1W (Ta) | 3.5 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerVDFN |
||
Infineon Technologies |
LV POWER MOS
|
pacchetto: - |
Azione7.024 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
TRANSISTOR P-CH BARE DIE
|
pacchetto: - |
Azione7.936 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET P-CH 250V 0.26A DFN2020-6
|
pacchetto: 6-UDFN Exposed Pad |
Azione5.824 |
|
MOSFET (Metal Oxide) | 250V | 260mA (Ta) | 3.5V, 10V | 2.5V @ 1mA | 2.8nC @ 10V | 81pF @ 25V | ±40V | - | 600mW (Ta) | 14 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET NCH 60V 25A TO252
|
pacchetto: 8-PowerTDFN |
Azione7.344 |
|
MOSFET (Metal Oxide) | 60V | 5.7A (Ta), 24A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.8nC @ 10V | 584pF @ 25V | ±20V | - | 1.2W (Ta) | 50 mOhm @ 5.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 80V 110A H2PAK-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.440 |
|
MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 4.5V @ 250µA | 60nC @ 10V | 4500pF @ 25V | ±20V | - | 205W (Tc) | 5 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione5.200 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 6V, 10V | 3.9V @ 250µA | 315nC @ 10V | 10250pF @ 25V | ±20V | - | 245W (Tc) | 1 mOhm @ 100A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D2Pak (6 Leads + Tab) |
||
ON Semiconductor |
MOSFET N-CH 500V TO-220FP
|
pacchetto: TO-220-3 Full Pack |
Azione7.500 |
|
MOSFET (Metal Oxide) | 500V | 5.5A (Tc) | 10V | 4.5V @ 50µA | 28nC @ 10V | 632pF @ 25V | ±30V | - | 30W (Tc) | 1.5 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Microchip Technology |
MOSFET N-CH 80V 300MA TO92-3
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione15.660 |
|
MOSFET (Metal Oxide) | 80V | 300mA (Tj) | 10V | 2V @ 1mA | - | 50pF @ 25V | ±30V | - | 1W (Tc) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET N-CH 100V DIRECTFET SB
|
pacchetto: DirectFET? Isometric SB |
Azione56.784 |
|
MOSFET (Metal Oxide) | 100V | 4.1A (Ta), 14.4A (Tc) | 10V | 5V @ 25µA | 13nC @ 10V | 515pF @ 25V | ±20V | - | 2.4W (Ta), 30W (Tc) | 62 mOhm @ 8.9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET SB | DirectFET? Isometric SB |
||
Diodes Incorporated |
MOSFET P-CH 60V 9.4A T0252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.128 |
|
MOSFET (Metal Oxide) | 60V | 3.6A (Tc) | 4.5V, 10V | 3V @ 250µA | 14nC @ 10V | 708pF @ 30V | ±20V | - | 1.6W (Ta) | 150 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 620V 5.5A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione15.732 |
|
MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 4.5V @ 50µA | 34nC @ 10V | 875pF @ 50V | ±30V | - | 90W (Tc) | 1.2 Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |