Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.480 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | ±16V | - | 80W (Tc) | 13.5 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 55V 18A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.952 |
|
MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | ±20V | - | 57W (Tc) | 110 mOhm @ 9.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8TSON-ADV
|
pacchetto: 8-PowerVDFN |
Azione3.184 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 15nC @ 10V | 1100pF @ 10V | ±20V | - | 700mW (Ta), 17W (Tc) | 15 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 500V 2A TP-FA
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione60.072 |
|
MOSFET (Metal Oxide) | 500V | 2A (Ta) | 4V, 10V | - | 8.7nC @ 10V | 175pF @ 30V | ±20V | - | 1W (Ta), 20W (Tc) | 4.9 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 20V 3.9A 6-TSOP
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione588.972 |
|
MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 11nC @ 4.5V | - | ±12V | - | 1.1W (Ta) | 51 mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V TO-220FP-3
|
pacchetto: TO-220-3 Full Pack, Formed Leads |
Azione4.800 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 640pF @ 25V | ±30V | - | 28W (Tc) | 1.4 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F (LG-Formed) | TO-220-3 Full Pack, Formed Leads |
||
NXP |
MOSFET N-CH 100V 35A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.256 |
|
MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 4V @ 1mA | 40nC @ 10V | 1704pF @ 25V | ±20V | - | 136W (Tc) | 40 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 100V 0.9A TO92-3
|
pacchetto: E-Line-3 |
Azione2.448 |
|
MOSFET (Metal Oxide) | 100V | 900mA (Ta) | 5V, 10V | 3V @ 1mA | - | 350pF @ 25V | ±20V | - | 850mW (Ta) | 500 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Diodes Incorporated |
MOSFET N-CH 240V 0.16A TO92-3
|
pacchetto: E-Line-3 |
Azione3.504 |
|
MOSFET (Metal Oxide) | 240V | 160mA (Ta) | 10V | 3V @ 1mA | - | 85pF @ 25V | ±20V | - | - | 16 Ohm @ 250mA, 10V | - | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 15A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione155.412 |
|
MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 2V @ 250µA | 28nC @ 5V | 930pF @ 25V | ±10V | - | 3.7W (Ta), 88W (Tc) | 160 mOhm @ 9A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V D2PAK-7
|
pacchetto: - |
Azione3.488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 150V 43A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.544 |
|
MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 42 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 150V 42A TO-220
|
pacchetto: TO-220-3 |
Azione106.932 |
|
MOSFET (Metal Oxide) | 150V | 42A (Tc) | 10V | 4.5V @ 250µA | 21nC @ 10V | 1880pF @ 25V | ±30V | - | 200W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 110A TO263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.472 |
|
MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 4V @ 250µA | 138nC @ 10V | 7710pF @ 25V | ±20V | - | 176W (Tj) | 1.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione5.552 |
|
MOSFET (Metal Oxide) | 40V | 13A (Ta), 37A (Tc) | 4.5V, 10V | 2V @ 250µA | 7.3nC @ 10V | 570pF @ 25V | ±20V | - | 3.5W (Ta), 28W (Tc) | 10.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
ON Semiconductor |
MOSFET N-CH 30V SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione2.880 |
|
MOSFET (Metal Oxide) | 30V | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 18.2nC @ 10V | 1670pF @ 15V | ±20V | - | 2.51W (Ta), 25.5W (Tc) | 4.8 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
ON Semiconductor |
MOSFET N-CH 30V 2A MCPH3
|
pacchetto: 3-SMD, Flat Leads |
Azione36.000 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 1.8V, 4.5V | - | 1.7nC @ 4.5V | 130pF @ 10V | ±12V | - | 800mW (Ta) | 165 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 3-MCPH | 3-SMD, Flat Leads |
||
Comchip Technology |
MOSFET N-CH 60V 0.25A SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione360.000 |
|
MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 1nC @ 10V | 25pF @ 25V | - | - | 350mW (Ta) | 3 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N CH 800V 14A TO-220
|
pacchetto: TO-220-3 |
Azione4.336 |
|
MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 5V @ 100µA | 32nC @ 10V | 1100pF @ 100V | ±30V | - | 190W (Tc) | 375 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 4.2A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione13.056 |
|
MOSFET (Metal Oxide) | 900V | 4.2A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 1100pF @ 25V | ±30V | - | 3.13W (Ta), 140W (Tc) | 3.3 Ohm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET P-CH 65V 28A TO-220
|
pacchetto: TO-220-3 |
Azione4.688 |
|
MOSFET (Metal Oxide) | 65V | 28A (Tc) | 10V | 4.5V @ 250µA | 46nC @ 10V | 2030pF @ 25V | ±15V | - | 83W (Tc) | 45 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N CH 40V 195A D2PAK-7PIN
|
pacchetto: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Azione16.608 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 3.9V @ 150µA | 225nC @ 10V | 7437pF @ 25V | ±20V | - | 231W (Tc) | 1.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
||
STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Azione4.544 |
|
MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 4V @ 250µA | 183nC @ 10V | 11800pF @ 25V | ±20V | - | 300W (Tc) | 2.4 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK | TO-263-3, D2Pak (2 Leads + Tab) Variant |
||
Diodes Incorporated |
MOSFET N-CH 30V 18.4A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione380.160 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 1V @ 250mA | 36.8nC @ 10V | 1890pF @ 15V | ±20V | - | 2.15W (Ta) | 20 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 12V 3A SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione589.440 |
|
MOSFET (Metal Oxide) | 12V | 3A (Ta) | 4.5V | 900mV @ 250µA | 15nC @ 4.5V | 715pF @ 6V | ±8V | - | 750mW (Ta) | 50 mOhm @ 3.85A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET N-CHA 30V 16A POWERDI
|
pacchetto: 8-PowerTDFN |
Azione2.128 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta), 65A (Tc) | 4.5V, 10V | 3V @ 250µA | 22.6nC @ 10V | 1320pF @ 15V | ±20V | - | 1.3W (Ta), 42W (Tc) | 6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 600V 29A TO220AB
|
pacchetto: TO-220-3 |
Azione85.368 |
|
MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 2600pF @ 100V | ±30V | - | 250W (Tc) | 125 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 40A PQFN
|
pacchetto: 8-PowerVDFN |
Azione24.492 |
|
MOSFET (Metal Oxide) | 30V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 2.35V @ 150µA | 120nC @ 10V | 7200pF @ 15V | ±20V | - | 3.6W (Ta), 250W (Tc) | 1.4 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8
|
pacchetto: 8-PowerTDFN |
Azione59.964 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 56nC @ 10V | 4400pF @ 15V | ±20V | - | 2.1W (Ta), 69W (Tc) | 3.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 100V 1.7A TO39-3
|
pacchetto: TO-205AD, TO-39-3 Metal Can |
Azione5.456 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Tj) | 5V, 10V | 2.4V @ 10mA | - | 500pF @ 25V | ±20V | - | 360mW (Tc) | 350 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |