Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 25V 22A DIRECTFET-SQ
|
pacchetto: DirectFET? Isometric SQ |
Azione189.360 |
|
MOSFET (Metal Oxide) | 25V | 22A (Ta), 95A (Tc) | 4.5V, 10V | 2.4V @ 50µA | 32nC @ 4.5V | 2880pF @ 13V | ±20V | - | 2.2W (Ta), 42W (Tc) | 3 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SQ | DirectFET? Isometric SQ |
||
Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
|
pacchetto: 8-PowerTDFN |
Azione249.012 |
|
MOSFET (Metal Oxide) | 30V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 70µA | 39nC @ 5V | 5080pF @ 15V | ±20V | - | 2.8W (Ta), 78W (Tc) | 3.2 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 20V 110A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione5.584 |
|
MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | - | 3.1W (Ta), 120W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH 20V 4.3A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.512 |
|
MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | ±12V | Schottky Diode (Isolated) | 2W (Ta) | 90 mOhm @ 2.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 8A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione10.580.976 |
|
MOSFET (Metal Oxide) | 30V | 8A (Ta) | 6V, 20V | 3.5V @ 250µA | 21nC @ 10V | 1100pF @ 15V | ±25V | - | 3W (Ta) | 26 mOhm @ 8A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 60V 8.4A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione69.480 |
|
MOSFET (Metal Oxide) | 60V | 8.4A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 10V | 450pF @ 25V | ±20V | - | 1.7W (Ta), 20.8W (Tc) | 155 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 40V 50A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione60.972 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 155nC @ 10V | 6900pF @ 20V | ±20V | - | 5.4W (Ta), 83W (Tc) | 3.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
ON Semiconductor |
MOSFET N-CH 60V 3A SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione130.272 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | ±15V | - | 1.3W (Ta) | 120 mOhm @ 1.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
ON Semiconductor |
MOSFET N-CH 30V 6.4A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione30.024 |
|
MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 15nC @ 4.5V | 950pF @ 24V | ±20V | - | 830mW (Ta) | 12 mOhm @ 10.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 30V 75A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.968 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 4V @ 1mA | - | 6000pF @ 25V | ±20V | - | 230W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 13.6A TO-220F
|
pacchetto: TO-220-3 Full Pack |
Azione18.600 |
|
MOSFET (Metal Oxide) | 100V | 13.6A (Tc) | 5V, 10V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±20V | - | 38W (Tc) | 100 mOhm @ 6.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 600V 29A TO-247
|
pacchetto: TO-247-3 |
Azione2.128 |
|
MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 4V @ 250µA | 83.6nC @ 10V | 2722pF @ 100V | ±25V | - | 210W (Tc) | 105 mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.656 |
|
MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 4.5V @ 370µA | 22nC @ 10V | 1010pF @ 100V | ±20V | - | 93W (Tc) | 330 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 10A 8PQFN
|
pacchetto: 8-PowerTDFN |
Azione6.816 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | ±20V | - | 2.6W (Ta), 20W (Tc) | 16 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 1000V 10A TO-268
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione6.000 |
|
MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | 4.5V @ 4mA | 155nC @ 10V | 4000pF @ 25V | ±20V | - | 300W (Tc) | 1.2 Ohm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione4.656 |
|
MOSFET (Metal Oxide) | 40V | 29A (Ta), 130A (Tc) | 4.5V, 10V | 2V @ 250µA | 50nC @ 10V | 3100pF @ 25V | ±20V | - | 3.7W (Ta), 83W (Tc) | 2.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
MOSFET N-CH 30V 35A 1212-8
|
pacchetto: PowerPAK? 1212-8 |
Azione609.132 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 43nC @ 10V | 1765pF @ 15V | ±20V | - | 3.8W (Ta), 52W (Tc) | 9.5 mOhm @ 10A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Nexperia USA Inc. |
PMPB85ENEA/SOT1220/SOT1220
|
pacchetto: - |
Azione3.248 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
pacchetto: SC-74, SOT-457 |
Azione375.024 |
|
MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 12nC @ 10V | 270pF @ 15V | ±20V | - | 2.5W (Ta) | 35 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.34A SOT323
|
pacchetto: SC-70, SOT-323 |
Azione5.184 |
|
MOSFET (Metal Oxide) | 60V | 340mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.4nC @ 4.5V | 28.5pF @ 30V | ±20V | - | 320mW (Ta) | 2 Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
STMicroelectronics |
MOSFET N-CH 68V 80A H2PAK-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.960 |
|
MOSFET (Metal Oxide) | 68V | 80A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 5850pF @ 25V | ±20V | - | 176W (Tc) | 6.3 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 100V 38A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.328 |
|
MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | ±20V | - | 3.1W (Ta), 170W (Tc) | 60 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET P-CH 12V 8A 6-TSOP
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione686.244 |
|
MOSFET (Metal Oxide) | 12V | 8A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 65nC @ 8V | 2010pF @ 6V | ±8V | - | 2W (Ta), 4.2W (Tc) | 22 mOhm @ 8.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 9A TO220
|
pacchetto: TO-220-3 |
Azione7.344 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 1240pF @ 100V | ±30V | - | 83.3W (Tc) | 385 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 25A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione336.900 |
|
MOSFET (Metal Oxide) | 200V | 25A (Tc) | 6V, 10V | 4V @ 250µA | 77nC @ 10V | 2250pF @ 100V | ±20V | - | 5.4W (Ta), 96W (Tc) | 70 mOhm @ 5.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 50A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.184 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4.2V @ 250µA | 30nC @ 10V | 1430pF @ 30V | ±20V | - | 75W (Tj) | 19 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 100A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione35.526 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 1mA | 82nC @ 10V | 6230pF @ 25V | ±20V | - | 234W (Tc) | 4.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.15A CST3C
|
pacchetto: SC-101, SOT-883 |
Azione93.378 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | ±20V | - | 500mW (Ta) | 3.9 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | CST3C | SC-101, SOT-883 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione29.400 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 290nC @ 10V | 7960pF @ 25V | ±20V | - | 300W (Tc) | 3.3 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N CH 300V 42A TO-220
|
pacchetto: TO-220-3 |
Azione5.072 |
|
MOSFET (Metal Oxide) | 300V | 42A (Tc) | 10V | 4V @ 250µA | 90nC @ 10V | 3200pF @ 25V | ±20V | - | 300W (Tc) | 75 mOhm @ 17A, 10V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |