Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A TO-220
|
pacchetto: TO-220-3 |
Azione2.768 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 2V @ 230µA | 190nC @ 10V | 6640pF @ 25V | ±20V | - | 300W (Tc) | 5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.584 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 1V @ 250µA | 14nC @ 4.5V | - | ±20V | Schottky Diode (Isolated) | 2.5W (Ta) | 25 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 150V 33A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.944 |
|
MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | ±30V | - | 3.8W (Ta), 170W (Tc) | 56 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 23A DFN5X6
|
pacchetto: 8-PowerSMD, Flat Leads |
Azione233.952 |
|
MOSFET (Metal Oxide) | 30V | 23A (Ta), 30A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 22.5nC @ 10V | 951pF @ 15V | ±20V | - | 4.1W (Ta), 25W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.672 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | D2PAK-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 100V 100A SOT-227B
|
pacchetto: SOT-227-4, miniBLOC |
Azione5.440 |
|
MOSFET (Metal Oxide) | 100V | 100A | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 15 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
ON Semiconductor |
MOSFET N-CH 60V 120A TO-220AB
|
pacchetto: TO-220-3 |
Azione6.320 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 5800pF @ 25V | ±20V | - | 215W (Tc) | 6 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 48A TO-220
|
pacchetto: TO-220-3 |
Azione85.608 |
|
MOSFET (Metal Oxide) | 30V | 48A (Ta) | 4.5V, 10V | 3V @ 250µA | 18nC @ 5V | 1250pF @ 15V | ±20V | - | 52W (Tc) | 12 mOhm @ 24A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Microsemi Corporation |
MOSFET N-CH 300V 40A TO-247
|
pacchetto: TO-247-3 |
Azione6.048 |
|
MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 4V @ 1mA | 195nC @ 10V | 4950pF @ 25V | ±30V | - | 300W (Tc) | 85 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 24V 12A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.536 |
|
MOSFET (Metal Oxide) | 24V | 12A (Ta), 85A (Tc) | 4.5V, 10V | 2V @ 250µA | 17.7nC @ 5V | 2050pF @ 20V | ±20V | - | 1.25W (Ta), 78.1W (Tc) | 5.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.800 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | - | 2.5W (Ta), 42W (Tc) | 100 mOhm @ 8.4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V BARE DIE
|
pacchetto: Die |
Azione6.480 |
|
MOSFET (Metal Oxide) | 60V | 3A (Tj) | 10V | 2.2V @ 196µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
||
Infineon Technologies |
MOSFET N-CH 55V 150A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.256 |
|
MOSFET (Metal Oxide) | 55V | 150A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
CONSUMER
|
pacchetto: - |
Azione6.240 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 600V 52A PLUS247
|
pacchetto: TO-247-3 |
Azione7.856 |
|
MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 4.5V @ 8mA | 198nC @ 10V | 6800pF @ 25V | ±30V | - | 735W (Tc) | 115 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 1200V 6A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.360 |
|
MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 5V @ 1mA | 92nC @ 10V | 2830pF @ 25V | ±30V | - | 250W (Tc) | 2.4 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V 312A SO8FL
|
pacchetto: 8-PowerTDFN |
Azione5.744 |
|
MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 2V @ 250µA | 143nC @ 10V | 8862pF @ 25V | ±20V | - | 3.8W (Ta), 167W (Tc) | 0.9 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2.5A TO-220SIS
|
pacchetto: TO-220-3 Full Pack |
Azione2.656 |
|
MOSFET (Metal Oxide) | 600V | 2.5A (Ta) | 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | ±30V | - | 30W (Tc) | 2.8 Ohm @ 1.3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 11.5A TO-220F
|
pacchetto: TO-220-3 Full Pack |
Azione19.200 |
|
MOSFET (Metal Oxide) | 500V | 11.5A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 1395pF @ 25V | ±30V | - | 42W (Tc) | 700 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 60V U8FL
|
pacchetto: 8-PowerWDFN |
Azione3.984 |
|
MOSFET (Metal Oxide) | 60V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 2V @ 250µA | 20nC @ 10V | 1400pF @ 25V | ±20V | - | 3.2W (Ta), 63W (Tc) | 6.8 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
IXYS |
MOSFET N-CH 600V 7A TO-263AA
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.928 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 5V @ 1mA | 13.3nC @ 10V | 705pF @ 25V | ±30V | - | 180W (Tc) | 1.15 Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Honeywell Microelectronics & Precision Sensors |
MOSFET N-CH 55V 4-PIN
|
pacchetto: 4-SIP |
Azione6.464 |
|
MOSFET (Metal Oxide) | 55V | - | 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 10V | - | 50W (Tj) | 400 mOhm @ 100mA, 5V | -55°C ~ 225°C (TJ) | Through Hole | 4-Power Tab | 4-SIP |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 27A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione27.576 |
|
MOSFET (Metal Oxide) | 60V | 27A (Tc) | 10V | 4V @ 250µA | 43nC @ 10V | 1400pF @ 25V | ±25V | - | 3.75W (Ta), 120W (Tc) | 70 mOhm @ 13.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V DPAK-3
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione53.562 |
|
MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 4.5V @ 320µA | 19nC @ 10V | 877pF @ 100V | ±20V | - | 83W (Tc) | 380 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 2.6A SOT-223-4
|
pacchetto: TO-261-4, TO-261AA |
Azione120.540 |
|
MOSFET (Metal Oxide) | 55V | 2.6A (Ta) | 10V | 4V @ 250µA | 17nC @ 20V | 250pF @ 25V | ±20V | - | 1.1W (Ta) | 90 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 181A D2PAK
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Azione40.038 |
|
MOSFET (Metal Oxide) | 75V | 181A (Tc) | 10V | 2.8V @ 1mA | 253nC @ 10V | 15800pF @ 25V | ±16V | - | 300W (Tc) | 3.4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Infineon Technologies |
MOSFET N-CH 40V 195A TO-220AB
|
pacchetto: TO-220-3 |
Azione17.664 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 9200pF @ 25V | ±20V | - | 380W (Tc) | 1.75 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 450V 1.5A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione95.940 |
|
MOSFET (Metal Oxide) | 450V | 1.5A (Tc) | 10V | 3.7V @ 250µA | 7nC @ 10V | 160pF @ 25V | ±30V | - | 30W (Tc) | 4.5 Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione167.898 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 110nC @ 10V | 6775pF @ 12V | ±20V | - | 272W (Tc) | 0.99 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Diodes Incorporated |
MOSFET N-CH 20V 4.2A SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione875.124 |
|
MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 1V @ 50µA | 7nC @ 4.5V | 594.3pF @ 10V | ±8V | - | 800mW (Ta) | 90 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |