Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V DIRECTFETL8
|
pacchetto: - |
Azione3.984 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 800V 1.9A TO251-3
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione3.264 |
|
MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 3.9V @ 120µA | 12nC @ 10V | 290pF @ 100V | ±20V | - | 42W (Tc) | 2.8 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 40V 340A D2PAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione213.096 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 9200pF @ 25V | ±20V | - | 380W (Tc) | 1.75 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 90A TO263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.392 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 95µA | 120nC @ 10V | 10000pF @ 20V | ±20V | - | 167W (Tc) | 2.3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 13A WDSON-2
|
pacchetto: 3-WDSON |
Azione5.840 |
|
MOSFET (Metal Oxide) | 60V | 13A (Ta), 56A (Tc) | 10V | 4V @ 33µA | 46nC @ 10V | 3700pF @ 30V | ±20V | - | 2.2W (Ta), 38W (Tc) | 7.7 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Infineon Technologies |
MOSFET N-CH 55V 28A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione14.184 |
|
MOSFET (Metal Oxide) | 55V | 28A (Tc) | 4V, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | ±16V | - | 68W (Tc) | 40 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Microsemi Corporation |
MOSFET N-CH 18-LCC
|
pacchetto: 18-BQFN Exposed Pad |
Azione6.128 |
|
MOSFET (Metal Oxide) | 100V | 3.5A (Tc) | 10V | 4V @ 250µA | 8.1nC @ 10V | - | ±20V | - | 800mW (Ta), 15W (Tc) | 610 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 330V 34A TO-220
|
pacchetto: TO-220-3 |
Azione5.488 |
|
MOSFET (Metal Oxide) | 330V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
||
NXP |
MOSFET N-CH 30V QFN3333
|
pacchetto: 8-VDFN Exposed Pad |
Azione7.280 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 37nC @ 10V | 2061pF @ 15V | ±20V | - | 71W (Tc) | 3.6 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
||
NXP |
MOSFET N-CH 60V 340MA SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione6.800 |
|
MOSFET (Metal Oxide) | 60V | 340mA (Ta) | 4.5V, 10V | 2V @ 1mA | - | 40pF @ 10V | ±15V | - | 830mW (Ta) | 3.9 Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione12.936 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 5800pF @ 25V | ±20V | - | 215W (Tc) | 6 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET N-CH 60V 3.1A SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione120.012 |
|
MOSFET (Metal Oxide) | 60V | 3.1A (Ta) | 4.5V, 10V | 1V @ 250µA | 5.7nC @ 10V | 330pF @ 40V | ±20V | - | 2W (Ta) | 120 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 250V 3.8A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione17.652 |
|
MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 1.1 Ohm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 500V 5.6A TO-220
|
pacchetto: TO-220-3 |
Azione19.236 |
|
MOSFET (Metal Oxide) | 500V | 5.6A (Tc) | 10V | 4.5V @ 50µA | 24.6nC @ 10V | 690pF @ 25V | ±30V | - | 90W (Tc) | 1.2 Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MV POWER MOS
|
pacchetto: 8-PowerTDFN |
Azione5.136 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 100V 250A TO-264
|
pacchetto: TO-264-3, TO-264AA |
Azione3.664 |
|
MOSFET (Metal Oxide) | 100V | 250A (Tc) | 10V | 5V @ 1mA | 205nC @ 10V | 16000pF @ 25V | ±20V | - | 1250W (Tc) | 6.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Microsemi Corporation |
MOSFET N-CH 600V 23A TO-247
|
pacchetto: TO-247-3 |
Azione2.368 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 5V @ 1mA | 110nC @ 10V | 4415pF @ 25V | ±30V | - | 415W (Tc) | 290 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP
|
pacchetto: 4-DIP (0.300", 7.62mm) |
Azione4.176 |
|
MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | ±20V | - | 1.3W (Ta) | 100 mOhm @ 1.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 4A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.936 |
|
MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 640pF @ 25V | ±30V | - | 40W (Tc) | 1.4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V 10A TO-220
|
pacchetto: TO-220-3 |
Azione504.084 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4.5V @ 250µA | 70nC @ 10V | 1370pF @ 25V | ±30V | - | 115W (Tc) | 750 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB
|
pacchetto: TO-220-3 |
Azione134.736 |
|
MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 4.5V @ 250µA | 22nC @ 10V | 600pF @ 25V | ±30V | - | 74W (Tc) | 1 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 250V 2.7A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione18.408 |
|
MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 220pF @ 25V | ±20V | - | 50W (Tc) | 3 Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 50A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.176 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 85µA | 68nC @ 10V | 2530pF @ 25V | ±20V | - | 136W (Tc) | 6.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 650V 17A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.856 |
|
MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 1950pF @ 100V | ±25V | - | 125W (Tc) | 190 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 200V 4.8A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione33.672 |
|
MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 800 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 28A TO-247AC
|
pacchetto: TO-247-3 |
Azione10.680 |
|
MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 2714pF @ 100V | ±30V | - | 250W (Tc) | 123 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Microchip Technology |
MOSFET N-CH 400V 0.16A TO92-3
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione7.776 |
|
MOSFET (Metal Oxide) | 400V | 160mA (Tj) | 4.5V | 1.8V @ 1mA | - | 110pF @ 25V | ±20V | - | 1W (Tc) | 12 Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
IXYS |
MOSFET N-CH 2500V 5A TO264
|
pacchetto: TO-264-3, TO-264AA |
Azione7.188 |
|
MOSFET (Metal Oxide) | 2500V | 5A (Tc) | 10V | 5V @ 1mA | 200nC @ 10V | 8560pF @ 25V | ±30V | - | 960W (Tc) | 8.8 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione30.384 |
|
MOSFET (Metal Oxide) | 100V | 12A (Ta), 80A (Tc) | 6V, 10V | 4V @ 250µA | 110nC @ 10V | 6000pF @ 25V | ±20V | - | 310W (Tc) | 9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 200V 40A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.420 |
|
MOSFET (Metal Oxide) | 200V | 40A (Tc) | 10V | 4V @ 250µA | 75nC @ 10V | 2500pF @ 25V | ±20V | - | 160W (Tc) | 45 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |