Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 9.7A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.640 |
|
MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | - | 3.8W (Ta), 48W (Tc) | 200 mOhm @ 5.7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 28V 14.5A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione3.392 |
|
MOSFET (Metal Oxide) | 28V | 14.5A (Ta) | 4.5V | 1V @ 250µA | - | - | ±12V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET P-CH 20V 8.6A 8-TSSOP
|
pacchetto: 8-TSSOP (0.173", 4.40mm Width) |
Azione6.416 |
|
MOSFET (Metal Oxide) | 20V | 8.6A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 89nC @ 5V | 4300pF @ 15V | ±12V | - | 1.5W (Tc) | 15 mOhm @ 8.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 200V 0.38A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione72.000 |
|
MOSFET (Metal Oxide) | 200V | 380mA (Ta) | 6V, 10V | 4.5V @ 250µA | 12nC @ 10V | 510pF @ 25V | ±20V | - | 750mW (Ta) | 2.35 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 17.7A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione24.060 |
|
MOSFET (Metal Oxide) | 25V | 17.7A (Ta), 30A (Tc) | 4.5V, 10V | 3V @ 250µA | 29nC @ 10V | 1490pF @ 13V | ±20V | - | 3.7W (Ta), 39W (Tc) | 7.5 mOhm @ 17.7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 14A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione915.840 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 3V @ 250µA | 20nC @ 5V | 1425pF @ 15V | ±20V | - | 2.8W (Ta), 60W (Tc) | 9.5 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 18A TO-3PN
|
pacchetto: TO-3P-3, SC-65-3 |
Azione6.896 |
|
MOSFET (Metal Oxide) | 500V | 18A (Ta) | 10V | 4V @ 1mA | 80nC @ 10V | 3720pF @ 10V | ±30V | - | 90W (Tc) | 270 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
||
Microsemi Corporation |
MOSFET N-CH 200V 112A SOT-227
|
pacchetto: SOT-227-4, miniBLOC |
Azione6.800 |
|
MOSFET (Metal Oxide) | 200V | 112A | 10V | 4V @ 1mA | 495nC @ 10V | 11640pF @ 25V | ±30V | - | 500W (Tc) | 19 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
ON Semiconductor |
MOSFET N-CH 60V 12A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione7.088 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | ±20V | - | 1.5W (Ta), 48W (Tj) | 94 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH DPAK
|
pacchetto: - |
Azione7.008 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
|
pacchetto: TO-220-3 |
Azione7.344 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | ±20V | - | 250W (Tc) | 6.6 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Microsemi Corporation |
MOSFET N-CH 1200V 20A SOT227
|
pacchetto: SOT-227-4, miniBLOC |
Azione6.896 |
|
MOSFET (Metal Oxide) | 1200V | 20A | 10V | 5V @ 2.5mA | 300nC @ 10V | 7736pF @ 25V | ±30V | - | 543W (Tc) | 672 mOhm @ 14A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 150V 88A TO-268
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione3.456 |
|
MOSFET (Metal Oxide) | 150V | 88A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 400W (Tc) | 22 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Microsemi Corporation |
MOSFET N-CH 1000V 17A D3PAK
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione6.336 |
|
MOSFET (Metal Oxide) | 1000V | 17A (Tc) | 10V | 5V @ 1mA | 150nC @ 10V | 4845pF @ 25V | ±30V | - | 625W (Tc) | 780 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
MOSFET N-CH 40V 90A TO220-3
|
pacchetto: TO-220-3 |
Azione3.216 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 95µA | 120nC @ 10V | 10000pF @ 20V | ±20V | - | 167W (Tc) | 2.3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Renesas Electronics America |
MOSFET N-CH 100V MP-3/TO-251
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione27.264 |
|
MOSFET (Metal Oxide) | 100V | 16A (Tc) | 4.5V, 10V | - | 20nC @ 10V | 900pF @ 10V | ±20V | - | 1W (Ta), 30W (Tc) | 125 mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-251 (MP-3) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Diodes Incorporated |
MOSFET P-CH 30V POWERDI3333-8
|
pacchetto: 8-PowerWDFN |
Azione2.464 |
|
MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 20V | 3V @ 250µA | 58nC @ 10V | 2987pF @ 15V | ±25V | - | 940mW (Ta) | 11 mOhm @ 12A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
Diodes Incorporated |
MOSFET N-CH 30V 0.35A SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione3.392 |
|
MOSFET (Metal Oxide) | 30V | 350mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 0.9nC @ 10V | 23.2pF @ 25V | ±20V | - | 350mW (Ta) | 2.8 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 500V 11A TO-220FP
|
pacchetto: TO-220-3 Full Pack |
Azione194.988 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4.5V @ 100µA | 47nC @ 10V | 1600pF @ 25V | ±30V | - | 30W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 950V 9A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.960 |
|
MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 5V @ 100µA | 13nC @ 10V | 450pF @ 100V | ±30V | - | 90W (Tc) | 1.25 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET P-CH 500V 2.8A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.664 |
|
MOSFET (Metal Oxide) | 500V | 2.8A (Tc) | 10V | 4.5V @ 100µA | 20nC @ 10V | 620pF @ 25V | ±30V | - | 70W (Tc) | 4 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 150V 51A TO-220AB
|
pacchetto: TO-220-3 |
Azione14.652 |
|
MOSFET (Metal Oxide) | 150V | 51A (Tc) | 10V | 5V @ 250µA | 89nC @ 10V | 2770pF @ 25V | ±30V | - | 3.8W (Ta), 230W (Tc) | 32 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione5.872 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 6V, 10V | 3.8V @ 279µA | 210nC @ 10V | 15600pF @ 50V | ±20V | - | 375W (Tc) | 1.7 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
||
STMicroelectronics |
MOSFET N-CH 600V 34A
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.512 |
|
MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 5V @ 250µA | 56nC @ 10V | 2500pF @ 100V | ±25V | - | 250W (Tc) | 90 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 600V 20A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione8.412 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 250µA | 96nC @ 10V | 1451pF @ 100V | ±30V | - | 179W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione25.092 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 76nC @ 0V | 4352pF @ 25V | ±20V | - | 254W (Tc) | 8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 100V 11A TO220FP
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione43.410 |
|
MOSFET (Metal Oxide) | 100V | 11A (Tc) | 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | ±20V | - | 48W (Tc) | 200 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione717.312 |
|
MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V, 20V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | ±25V | - | 2.5W (Ta) | 13.3 mOhm @ 9.2A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 120A TO220AB
|
pacchetto: TO-220-3 |
Azione24.138 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 1mA | 136nC @ 10V | 9710pF @ 20V | ±20V | - | 338W (Tc) | 1.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 48A PLUS247
|
pacchetto: TO-247-3 |
Azione5.120 |
|
MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 4V @ 4mA | 190nC @ 10V | 7000pF @ 25V | ±20V | - | 500W (Tc) | 100 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |