Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-SH
|
pacchetto: DirectFET? Isometric SH |
Azione85.140 |
|
MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | ±20V | - | 2.2W (Ta), 42W (Tc) | 62 mOhm @ 5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SH | DirectFET? Isometric SH |
||
Infineon Technologies |
MOSFET N-CH 75V 100A TO-220
|
pacchetto: TO-220-3 |
Azione3.344 |
|
MOSFET (Metal Oxide) | 75V | 100A (Tc) | 4.5V, 10V | 4V @ 250µA | 200nC @ 10V | 6020pF @ 25V | ±20V | - | 300W (Tc) | 7.1 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 80A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione390.708 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 4.5V, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | ±20V | - | 250W (Tc) | 14 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 16A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione898.188 |
|
MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 3V @ 250µA | 9.9nC @ 5V | 380pF @ 25V | ±16V | - | 35W (Tc) | 58 mOhm @ 9.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.728 |
|
MOSFET (Metal Oxide) | 150V | 21A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | ±20V | - | 3.8W (Ta), 94W (Tc) | 82 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas Electronics America |
MOSFET N-CH 500V 12A TO220
|
pacchetto: TO-220-3 Full Pack |
Azione2.192 |
|
MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | - | 27.8nC @ 10V | 1050pF @ 25V | ±30V | - | 30W (Tc) | 700 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON
|
pacchetto: 8-VDFN Exposed Pad |
Azione3.248 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | ±20V | - | 700mW (Ta), 27W (Tc) | 8 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
ON Semiconductor |
MOSFET N-CH 30V 6A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione180.000 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 10V | 950pF @ 24V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 32 mOhm @ 6A, 10V | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 7A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.488 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 920pF @ 25V | ±30V | - | 83W (Tc) | 600 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 11A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione62.400 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1490pF @ 25V | ±30V | - | 125W (Tc) | 380 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 400V 2A TO-220
|
pacchetto: TO-220-3 |
Azione7.456 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 350pF @ 25V | ±30V | - | 63W (Tc) | 6.5 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 39A SOT-227B
|
pacchetto: SOT-227-4, miniBLOC |
Azione3.328 |
|
MOSFET (Metal Oxide) | 500V | 39A | 10V | 4V @ 4mA | 190nC @ 10V | 8000pF @ 25V | ±20V | - | 400W (Tc) | 120 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 500V 50A TO-264AA
|
pacchetto: TO-264-3, TO-264AA |
Azione2.288 |
|
MOSFET (Metal Oxide) | 500V | 50A (Tc) | 10V | 4.5V @ 8mA | 330nC @ 10V | 9400pF @ 25V | ±20V | - | 560W (Tc) | 80 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-3P(N)
|
pacchetto: TO-3P-3, SC-65-3 |
Azione7.888 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 15.4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Texas Instruments |
MOSFET P-CH 15V 2.3A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione378.504 |
|
MOSFET (Metal Oxide) | 15V | 2.3A (Ta) | 2.7V, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | +2V, -15V | - | 791mW (Ta) | 90 mOhm @ 2.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 60V 120A TO263-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione7.520 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.5V @ 250µA | 185nC @ 10V | 11900pF @ 25V | ±20V | - | 375W (Tc) | 2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
||
Vishay Siliconix |
MOSFET N-CH 8V 12A SC70-6
|
pacchetto: PowerPAK? SC-70-6 |
Azione2.671.692 |
|
MOSFET (Metal Oxide) | 8V | 12A (Tc) | 1.2V, 4.5V | 800mV @ 250µA | 32nC @ 5V | 1800pF @ 4V | ±5V | - | 3.5W (Ta), 19W (Tc) | 11 mOhm @ 9.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
||
Nexperia USA Inc. |
MOSFET N-CH 300V 350MA SC73
|
pacchetto: TO-261-4, TO-261AA |
Azione5.488 |
|
MOSFET (Metal Oxide) | 300V | 350mA (Ta) | 10V | 2V @ 1mA | - | 120pF @ 25V | ±20V | - | 1.5W (Ta) | 6 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Diodes Incorporated |
MOSFET NCH 80V 50A TO252
|
pacchetto: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Azione8.976 |
|
MOSFET (Metal Oxide) | 80V | 50A (Tc) | - | 3V @ 250µA | 46.8nC @ 10V | 2051pF @ 40V | - | - | 2.6W (Ta) | 16 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-3P(N)
|
pacchetto: TO-3P-3, SC-65-3 |
Azione6.564 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 15.4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
IXYS |
MOSFET N-CH 75V 90A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione103.464 |
|
MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 3290pF @ 25V | ±20V | - | 180W (Tc) | 10 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 15A TO220F
|
pacchetto: TO-220-3 Full Pack |
Azione21.480 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 4V @ 250µA | 17.2nC @ 10V | 841pF @ 100V | ±30V | - | 34W (Tc) | 290 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 100A TO-220
|
pacchetto: TO-220-3 |
Azione7.656 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | ±20V | - | 255W (Tc) | 2.3 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 30A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione15.852 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 3.5V @ 960µA | 96nC @ 10V | 2127pF @ 100V | ±20V | - | 219W (Tc) | 125 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione15.288 |
|
MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | ±20V | - | 3.8W (Ta), 45W (Tc) | 175 mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 32A POWER56
|
pacchetto: 8-PowerTDFN |
Azione228.840 |
|
MOSFET (Metal Oxide) | 25V | 32A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 1mA | 119nC @ 10V | 7770pF @ 13V | ±20V | - | 2.5W (Ta), 89W (Tc) | 1.25 mOhm @ 32A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 20V 2.2A SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione1.046.772 |
|
MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.5V, 4.5V | 950mV @ 250µA | 10nC @ 4.5V | 375pF @ 6V | ±8V | - | 700mW (Ta) | 100 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 9A TO-220AB
|
pacchetto: TO-220-3 |
Azione228.060 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | ±10V | - | 74W (Tc) | 400 mOhm @ 5.4A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione8.244 |
|
MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1030pF @ 25V | ±30V | - | 3.1W (Ta), 125W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET P-CH 100V 3.8A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione227.424 |
|
MOSFET (Metal Oxide) | 100V | 3.8A (Ta) | 6V, 10V | 4V @ 250µA | 26.9nC @ 10V | 1055pF @ 50V | ±20V | - | 2.17W (Ta) | 150 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |