Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 600V 6.8A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.528 |
|
MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | ±20V | - | 66W (Tc) | 520 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N CH 30V 13A 8-SO
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.808 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 3V @ 250µA | 31nC @ 5V | - | ±12V | - | 2.5W (Ta) | 11 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 200V 1.2A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione279.024 |
|
MOSFET (Metal Oxide) | 200V | 1.2A (Ta) | 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | ±30V | - | 2.5W (Ta) | 730 mOhm @ 720mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Global Power Technologies Group |
MOSFET N-CH 600V 2A TO220F
|
pacchetto: TO-220-3 Full Pack |
Azione3.472 |
|
MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 5V @ 250µA | 9nC @ 10V | 360pF @ 25V | ±30V | - | 17.3W (Tc) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
NXP |
MOSFET N-CH 40V 120A TO220AB
|
pacchetto: TO-220-3 |
Azione6.448 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 5V, 10V | 2.1V @ 1mA | 87.8nC @ 5V | 13160pF @ 25V | ±10V | - | 293W (Tc) | 2.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220NIS
|
pacchetto: TO-220-3 Full Pack |
Azione77.400 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 10V | 4V @ 1mA | 196nC @ 10V | 12400pF @ 10V | ±20V | - | 45W (Tc) | 5.8 mOhm @ 23A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 20A TO-3P
|
pacchetto: TO-3P-3, SC-65-3 |
Azione4.432 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 55nC @ 10V | 3290pF @ 25V | ±30V | - | 277W (Tc) | 265 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 100A TO-3P
|
pacchetto: TO-3P-3, SC-65-3 |
Azione103.464 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 250µA | 112nC @ 10V | 4120pF @ 25V | ±25V | - | 214W (Tc) | 10 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 2.4A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione4.256 |
|
MOSFET (Metal Oxide) | 800V | 2.4A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 550pF @ 25V | ±30V | - | 3.13W (Ta), 85W (Tc) | 6.3 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 19A TO-220
|
pacchetto: TO-220-3 |
Azione3.280 |
|
MOSFET (Metal Oxide) | 200V | 19A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | ±30V | - | 139W (Tc) | 170 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 0.27A TO-92L
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione4.160 |
|
MOSFET (Metal Oxide) | 500V | 270mA (Tc) | 10V | 3.7V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | ±30V | - | 1.5W (Tc) | 9 Ohm @ 135mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92L | TO-226-3, TO-92-3 Long Body |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 10A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione4.768 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta), 42A (Tc) | 4.5V, 10V | 3V @ 250µA | 31nC @ 10V | 1143pF @ 15V | ±20V | - | 3.8W (Ta), 50W (Tc) | 16 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 28V 60A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione120.012 |
|
MOSFET (Metal Oxide) | 28V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 30nC @ 4.5V | 2150pF @ 24V | ±20V | - | 75W (Tc) | 7.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 500V 70A ISOTOP
|
pacchetto: ISOTOP |
Azione3.408 |
|
MOSFET (Metal Oxide) | 500V | 70A | 10V | 5V @ 250µA | 266nC @ 10V | 7500pF @ 25V | ±30V | - | 600W (Tc) | 50 mOhm @ 30A, 10V | 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
||
STMicroelectronics |
MOSFET N-CH 40V 120A TO-220
|
pacchetto: TO-220-3 |
Azione780.000 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7400pF @ 25V | ±20V | - | 330W (Tc) | 2.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
TRANSISTOR N-CH
|
pacchetto: - |
Azione6.352 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 500V 2.4A TO-251
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione2.032 |
|
MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 13V | 3.5V @ 50µA | 6nC @ 10V | 124pF @ 100V | ±20V | - | 33W (Tc) | 2 Ohm @ 600mA, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Texas Instruments |
MOSFET P-CH 15V 2.3A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.008 |
|
MOSFET (Metal Oxide) | 15V | 2.3A (Ta) | 2.7V, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | +2V, -15V | - | 791mW (Ta) | 90 mOhm @ 2.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione5.296 |
|
MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 3.5V @ 250µA | 65nC @ 10V | 4300pF @ 25V | ±20V | - | 3.8W (Ta), 128W (Tc) | 1.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
STMicroelectronics |
MOSFET N-CH 60V PWRFLAT 8X8
|
pacchetto: - |
Azione5.184 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
MOSFET N-CH 330V 18A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.608 |
|
MOSFET (Metal Oxide) | 330V | 18A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1650pF @ 25V | ±20V | - | 150W (Tc) | 180 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 120A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione401.484 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | ±20V | - | 250W (Tc) | 6 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 1000V 3A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.896 |
|
MOSFET (Metal Oxide) | 1000V | 3A (Tc) | - | - | 37.5nC @ 5V | 1020pF @ 25V | ±20V | Depletion Mode | 125W (Tc) | 5.5 Ohm @ 1.5A, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 150V 50A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione16.632 |
|
MOSFET (Metal Oxide) | 150V | 50A (Tc) | 10V | 4V @ 1mA | 79nC @ 10V | 4720pF @ 25V | ±20V | - | 250W (Tc) | 35 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione21.114 |
|
MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 280 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 400V 5.7A TO220FP
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione20.010 |
|
MOSFET (Metal Oxide) | 400V | 5.7A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | 40W (Tc) | 550 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Rohm Semiconductor |
MOSFET N-CH 250V 8A SOT-428
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione46.104 |
|
MOSFET (Metal Oxide) | 250V | 8A (Ta) | 10V | 5V @ 1mA | 25nC @ 10V | 1440pF @ 25V | ±30V | - | 850mW (Ta), 20W (Tc) | 300 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 20V 9A MICROFET 1.6
|
pacchetto: 6-PowerUFDFN |
Azione719.040 |
|
MOSFET (Metal Oxide) | 20V | 9A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 865pF @ 10V | ±12V | - | 2.1W (Ta) | 18 mOhm @ 9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | MicroFet 1.6x1.6 Thin | 6-PowerUFDFN |
||
Infineon Technologies |
MOSFET N-CH 40V 73A TDSON-8
|
pacchetto: 8-PowerTDFN |
Azione215.154 |
|
MOSFET (Metal Oxide) | 40V | 16A (Ta), 73A (Tc) | 4.5V, 10V | 2V @ 23µA | 40nC @ 10V | 3200pF @ 20V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5.9 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 100V DIRECTFET L8
|
pacchetto: DirectFET? Isometric L8 |
Azione32.664 |
|
MOSFET (Metal Oxide) | 100V | 375A (Tc) | 10V | 4V @ 250µA | 300nC @ 10V | 11560pF @ 25V | ±20V | - | 3.3W (Ta), 125W (Tc) | 3.5 mOhm @ 74A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |