Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 50A TO-251-3
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione3.408 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 23nC @ 10V | 2400pF @ 15V | ±20V | - | 56W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 30V 30A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.632 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 11nC @ 5V | 1355pF @ 15V | ±20V | - | 52W (Tc) | 12.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | P-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 40V 3.4A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.064 |
|
MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 37nC @ 10V | 1110pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 112 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Renesas Electronics America |
MOSFET N-CH 40V 90A TO-220
|
pacchetto: TO-262-3 Full Pack, I2Pak |
Azione6.128 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 7050pF @ 25V | ±20V | - | 1.8W (Ta), 176W (Tc) | 2.8 mOhm @ 45A, 10V | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Full Pack, I2Pak |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM
|
pacchetto: SC-70, SOT-323 |
Azione5.264 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | - | 1.5V @ 1µA | - | 7pF @ 3V | - | - | 150mW (Ta) | 20 Ohm @ 10mA, 4V | - | Surface Mount | USM | SC-70, SOT-323 |
||
NXP |
MOSFET N-CH 30V 5.1A 6TSOP
|
pacchetto: SC-74, SOT-457 |
Azione76.800 |
|
MOSFET (Metal Oxide) | 30V | 5.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 334pF @ 15V | ±20V | - | 500mW (Ta) | 31 mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
ON Semiconductor |
MOSFET P-CH 20V 0.76A SOT-416
|
pacchetto: SC-75, SOT-416 |
Azione104.760 |
|
MOSFET (Metal Oxide) | 20V | 760mA (Tj) | 1.8V, 4.5V | 450mV @ 250µA | 2.1nC @ 4.5V | 156pF @ 5V | ±6V | - | 301mW (Tj) | 360 mOhm @ 350mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75, SOT-416 |
||
NXP |
MOSFET N-CH 30V 75A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.368 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | 56nC @ 5V | 6526pF @ 25V | ±15V | - | 254W (Tc) | 3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.344 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 250µA | 142nC @ 10V | 5300pF @ 25V | ±20V | - | 300W (Tc) | 8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 550V 12A TO220-3
|
pacchetto: TO-220-3 Full Pack |
Azione3.280 |
|
MOSFET (Metal Oxide) | 550V | 12A (Tc) | 10V | 3.5V @ 440µA | 31nC @ 10V | 1190pF @ 100V | ±20V | - | 104W (Tc) | 299 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 150V 96A TO-268
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione3.488 |
|
MOSFET (Metal Oxide) | 150V | 96A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 3500pF @ 25V | ±20V | - | 480W (Tc) | 24 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Fairchild/ON Semiconductor |
FCP22N60N IN TO220 F102 T/F OPTI
|
pacchetto: TO-220-3 Full Pack |
Azione3.760 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 1950pF @ 100V | ±45V | - | 205W (Tc) | 165 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Microchip Technology |
MOSFET N-CH 40V 0.89A SOT89-3
|
pacchetto: TO-243AA |
Azione134.412 |
|
MOSFET (Metal Oxide) | 40V | 890mA (Tj) | 5V, 10V | 1.6V @ 1mA | - | 125pF @ 20V | ±20V | - | 1.6W (Tc) | 1 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 14A TO220F
|
pacchetto: TO-220-3 Full Pack |
Azione121.980 |
|
MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4.5V @ 250µA | 51nC @ 10V | 2297pF @ 25V | ±30V | - | 50W (Tc) | 380 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 85A LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione5.072 |
|
MOSFET (Metal Oxide) | 100V | 85A (Tc) | 10V | 4V @ 1mA | 68nC @ 10V | 5067pF @ 25V | ±20V | - | 238W (Tc) | 12 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
ON Semiconductor |
MOSFET N-CH 40V 27A SO8FL
|
pacchetto: 8-PowerTDFN |
Azione6.032 |
|
MOSFET (Metal Oxide) | 40V | 27A (Ta), 127A (Tc) | 4.5V, 10V | 2V @ 250µA | 50nC @ 10V | 3100pF @ 25V | ±20V | - | 3.7W (Ta), 83W (Tc) | 2.8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT
|
pacchetto: 8-PowerVDFN |
Azione6.480 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 2300pF @ 25V | ±20V | - | 111W (Tc) | 2.5 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 34A LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione7.888 |
|
MOSFET (Metal Oxide) | 60V | 34A (Tc) | 5V | 2.1V @ 1mA | 12nC @ 5V | 1500pF @ 25V | ±10V | - | 65W (Tc) | 21.5 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 39A TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.912 |
|
MOSFET (Metal Oxide) | 100V | 39A (Tc) | 4.5V, 10V | 3V @ 250µA | 63nC @ 10V | 1810pF @ 25V | ±16V | - | 183W (Tj) | 35 mOhm @ 39A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V 6.5A TO-220
|
pacchetto: TO-220-3 |
Azione36.600 |
|
MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 4V @ 250µA | 17.4nC @ 10V | 452pF @ 50V | ±25V | - | 70W (Tc) | 745 mOhm @ 3.25A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 12A TO-220
|
pacchetto: TO-220-3 |
Azione510.972 |
|
MOSFET (Metal Oxide) | 40V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 49nC @ 10V | 2500pF @ 20V | ±20V | - | 2W (Ta), 60W (Tc) | 8.7 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET P-CH 20V SC-74
|
pacchetto: SC-74, SOT-457 |
Azione4.176 |
|
MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 12nC @ 4.5V | 763pF @ 10V | ±12V | - | 530mW (Ta), 4.46W (Tc) | 62 mOhm @ 3.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione38.580 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | - | 3093pF @ 25V | ±20V | - | 166W (Tc) | 11 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 20.3A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione40.194 |
|
MOSFET (Metal Oxide) | 55V | 20.3A (Tc) | 10V | 4V @ 1mA | 11nC @ 10V | 483pF @ 25V | ±20V | - | 62W (Tc) | 75 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A POWER33
|
pacchetto: 8-PowerWDFN |
Azione373.392 |
|
MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 3V @ 250µA | 57nC @ 10V | 3405pF @ 10V | ±20V | - | 2W (Ta), 41W (Tc) | 5.7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
IXYS |
MOSFET P-CH 100V 50A TO-247AD
|
pacchetto: TO-247-3 |
Azione13.212 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 5V @ 250µA | 140nC @ 10V | 4350pF @ 25V | ±20V | - | 300W (Tc) | 55 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 27A TO-247AC
|
pacchetto: TO-247-3 |
Azione2.000 |
|
MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 5V @ 250µA | 180nC @ 10V | 4660pF @ 25V | ±30V | - | 500W (Tc) | 220 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione6.000 |
|
MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 2V @ 1mA | - | 125pF @ 25V | ±20V | - | 1W (Tc) | 10 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Vishay Siliconix |
MOSFET N-CH 100V 1.15A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione899.532 |
|
MOSFET (Metal Oxide) | 100V | 1.15A (Ta) | 10V | 4V @ 250µA | 5nC @ 10V | - | ±20V | - | 730mW (Ta) | 250 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 5.4A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione44.004 |
|
MOSFET (Metal Oxide) | 900V | 5.4A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1550pF @ 25V | ±30V | - | 3.13W (Ta), 158W (Tc) | 2.3 Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |