|
|
Infineon Technologies |
IGBT CHIP WAFER
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 18A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
pacchetto: Die |
Azione3.648 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 67A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.552 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione300.000 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 30A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione19.632 |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 2A MICRO8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
|
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Azione7.312 |
|
|
|
Infineon Technologies |
TRANSISTOR N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
pacchetto: - |
Azione3.232 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 173A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.912 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione259.896 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 4.3A TO-251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Stub Leads, IPak
|
pacchetto: TO-251-3 Stub Leads, IPak |
Azione6.352 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 61A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione144.060 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 100A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
|
pacchetto: 8-PowerTDFN |
Azione98.790 |
|
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 7A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-DSO-8
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.296 |
|
|
|
Infineon Technologies |
TRANS PREBIAS PNP 250MW TSLP-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
|
pacchetto: SC-101, SOT-883 |
Azione7.248 |
|
|
|
Infineon Technologies |
TRANSISTOR RF BIP SC-75
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
- Gain: 20dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
|
pacchetto: SC-75, SOT-416 |
Azione7.104 |
|
|
|
Infineon Technologies |
TRANS RF NPN 6V 35MA TSFP-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
- Gain: 15.5dB
- Power - Max: 210mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
|
pacchetto: SOT-723 |
Azione6.128 |
|
|
|
Infineon Technologies |
IC MOD PWR HYBRID 600V 15A MOTOR
- Type: IGBT
- Configuration: 3 Phase
- Current: 15A
- Voltage: 600V
- Voltage - Isolation: 2000Vrms
- Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
|
pacchetto: 29-PowerSSIP Module, 21 Leads, Formed Leads |
Azione3.424 |
|
|
|
Infineon Technologies |
IC REG LINEAR 7.5A TO263-5
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 7.5A
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
- Supplier Device Package: TO-263-5
|
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Azione4.368 |
|
|
|
Infineon Technologies |
IC REG LINEAR 5V 100MA 8DSO
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione3.744 |
|
|
|
Infineon Technologies |
IC REG LINEAR 5V 200MA 14DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.35V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 100µA ~ 10mA
- PSRR: 65dB (100Hz)
- Control Features: Enable, Reset
- Protection Features: Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-14
|
pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione7.296 |
|
|
|
Infineon Technologies |
IC REG LINEAR 250MA TO252-5-11
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 250mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: PG-TO252-5-11
|
pacchetto: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Azione21.720 |
|
|
|
Infineon Technologies |
IC HIGH SIDE PWR SWITCH D2PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.75 V ~ 41 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 8.8A
- Rds On (Typ): 35 mOhm
- Input Type: Non-Inverting
- Features: Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: P-TO263-5
|
pacchetto: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Azione6.672 |
|
|
|
Infineon Technologies |
IC DRIVER 3PHASE 600V 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
|
pacchetto: 44-LCC (J-Lead), 32 Leads |
Azione3.008 |
|
|
|
Infineon Technologies |
IC DRIVER HIGH SIDE SGL 8SOIC
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 75ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.264 |
|
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 3.3 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 500V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
|
pacchetto: 16-SOIC (0.295", 7.50mm Width) |
Azione73.356 |
|
|
|
Infineon Technologies |
IC CURRENT SENSE 0.2& 16SOIC
- Function: Current Sense
- Sensing Method: -
- Accuracy: ±0.2%
- Voltage - Input: 8 V ~ 20 V
- Current - Output: -
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
|
pacchetto: 16-SOIC (0.295", 7.50mm Width) |
Azione4.512 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 384KB FLASH 144LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 119
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: 144-LQFP (20x20)
|
pacchetto: 144-LQFP Exposed Pad |
Azione5.424 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 128KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: CAN, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 47
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 14x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
|
pacchetto: 64-LQFP |
Azione5.248 |
|
|
|
Infineon Technologies |
IC AUDIO DRIVER DGTL PROT 16SOIC
- Function: -
- Applications: -
- Number of Channels: -
- Interface: -
- Voltage - Supply: -
- Operating Temperature: -
- Specifications: -
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
pacchetto: 16-SOIC (0.154", 3.90mm Width) |
Azione120.360 |
|
|
|
Infineon Technologies |
IC REGULATOR PG-VQFN-40-901
- Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: 40-VQFN (5x5)
|
pacchetto: 40-VFQFN Exposed Pad |
Azione2.496 |
|
|
|
Infineon Technologies |
IC CONTROLLER
- Applications: -
- Current - Supply: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
pacchetto: - |
Azione2.704 |
|