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Infineon Technologies |
IGBT 600V 12A 68W TO220-3
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 24A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
- Power - Max: 68W
- Switching Energy: 215µJ
- Input Type: Standard
- Gate Charge: 32nC
- Td (on/off) @ 25°C: 25ns/220ns
- Test Condition: 400V, 6A, 50 Ohm, 15V
- Reverse Recovery Time (trr): 200ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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pacchetto: TO-220-3 |
Azione2.688 |
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Infineon Technologies |
MOSFET N-CH 55V 25A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.248 |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione61.800 |
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Infineon Technologies |
MOSFET N-CH 75V 100A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.864 |
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Infineon Technologies |
MOSFET N-CH 55V 45A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione7.744 |
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Infineon Technologies |
MOSFET P-CH 100V 0.68A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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pacchetto: TO-261-4, TO-261AA |
Azione2.016 |
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Infineon Technologies |
MOSFET N-CH 20V 37A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.424 |
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Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.448 |
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Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione15.948 |
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Infineon Technologies |
MOSFET N-CH 100V 45A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione3.840 |
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Infineon Technologies |
MOSFET N-CH 30V 65A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.352 |
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Infineon Technologies |
MOSFET N-CH 30V 12A 8PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3), Power33
- Package / Case: 8-PowerTDFN
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pacchetto: 8-PowerTDFN |
Azione3.520 |
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Infineon Technologies |
MOSFET N-CH 650V 1.8A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione9.564 |
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Infineon Technologies |
MOSFET N-CH 250V 25A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione390.000 |
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Infineon Technologies |
MOSFET N-CH 200V 15.2A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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pacchetto: 8-PowerTDFN |
Azione235.080 |
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Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione14.160 |
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Infineon Technologies |
TRANS PNP 45V 0.1A SOT-323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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pacchetto: SC-70, SOT-323 |
Azione4.624 |
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Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
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pacchetto: Die |
Azione4.608 |
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Infineon Technologies |
IC REG LINEAR 5V 650MA P-TO220-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 42V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.7V @ 550mA
- Current - Output: 650mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1.5mA ~ 90mA
- PSRR: 54dB (100Hz)
- Control Features: Reset
- Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-5 Formed Leads
- Supplier Device Package: P-TO220-5
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pacchetto: TO-220-5 Formed Leads |
Azione7.984 |
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Infineon Technologies |
IC REG LINEAR POS ADJ 1.5A DPAK
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): 3.3V
- Voltage Dropout (Max): 1.3V @ 1.5A
- Current - Output: 1.5A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione180.000 |
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Infineon Technologies |
IC CODEC VOIP 100-TQFP
- Function: Voice Over IP Processor
- Interface: ADPCM
- Number of Circuits: 1
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: PG-TQFP-100
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pacchetto: 100-LQFP |
Azione4.688 |
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Infineon Technologies |
IC CONTROLLER SERIAL 44-PLCC
- Applications: -
- Interface: Serial
- Voltage - Supply: 4.75 V ~ 5.25 V
- Package / Case: 44-LCC (J-Lead)
- Supplier Device Package: P-LCC-44
- Mounting Type: Surface Mount
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pacchetto: 44-LCC (J-Lead) |
Azione7.360 |
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Infineon Technologies |
IC MCU 32BIT 320KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 40MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 320KB (320K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 42K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione6.480 |
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Infineon Technologies |
IC MCU 8BIT 4KB FLASH 20TSSOP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 86MHz
- Connectivity: LIN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 9
- Program Memory Size: 4KB (4K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 768 x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
- Data Converters: A/D 4x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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pacchetto: 20-TSSOP (0.173", 4.40mm Width) |
Azione2.720 |
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Infineon Technologies |
IC MCU 32BIT ROMLESS 208LBGA
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 150MHz
- Connectivity: CAN, EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART
- Peripherals: DMA, POR, PWM, WDT
- Number of I/O: 72
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 144K x 8
- Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V
- Data Converters: -
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 208-LBGA
- Supplier Device Package: P-LBGA-208-2
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pacchetto: 208-LBGA |
Azione7.040 |
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Infineon Technologies |
IC MCU 16BIT 128KB FLASH 100TQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: CAN, EBI/EMI, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 79
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 14x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP
- Supplier Device Package: PG-TQFP-100-5
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pacchetto: 100-LQFP |
Azione8.460 |
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Infineon Technologies |
IC MAGNETIC ANGLE SENSOR 8DSO
- For Measuring: Angle
- Technology: Magnetoresistive
- Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
- Linear Range: -
- Output: Wheatstone Bridge
- Output Signal: -
- Actuator Type: External Magnet Not Included
- Linearity: -
- Resistance: -
- Resistance Tolerance: -
- Voltage - Supply: 3 V ~ 5.5 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Operating Temperature: -40°C ~ 125°C
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pacchetto: - |
Azione10.260 |
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Infineon Technologies |
SPEED SENSORS 3SSO
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
|
pacchetto: - |
Azione3.744 |
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Infineon Technologies |
IC CONTROLLER PHASE 20L-MLPQ
- Applications: Processor
- Current - Supply: 10mA
- Voltage - Supply: 8.4 V ~ 14 V
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 20-VFQFN Exposed Pad
- Supplier Device Package: 20-MLPQ (4x4)
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pacchetto: 20-VFQFN Exposed Pad |
Azione2.480 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-48-2
- Applications: -
- Voltage - Input: -
- Number of Outputs: -
- Voltage - Output: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione2.784 |
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