Pagina 1198 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 46.059
Pagina  1.198/1.536
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS29GL256S-10DHV01-TR
Cypress Semiconductor Corp

IC MEM FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.664
-
-
-
-
-
-
-
-
-
-
-
-
IS46LD32320A-25BLA1
ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4
  • Memory Size: 1Gb (32M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-TFBGA
  • Supplier Device Package: 134-TFBGA (10x11.5)
pacchetto: 134-TFBGA
Azione3.152
DRAM
SDRAM - Mobile LPDDR2-S4
1Gb (32M x 32)
Parallel
400MHz
15ns
-
1.14 V ~ 1.95 V
-40°C ~ 85°C (TC)
Surface Mount
134-TFBGA
134-TFBGA (10x11.5)
MT29E2T08CTCBBJ7-6:B TR
Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.128
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F256G08CJAABWP-12:A TR
Micron Technology Inc.

IC FLASH 256GBIT 83MHZ 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.904
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
IS42SM32200K-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
pacchetto: 90-TFBGA
Azione4.384
DRAM
SDRAM - Mobile
64Mb (2M x 32)
Parallel
166MHz
-
5.5ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
MT29F64G08AKCBBH2-12IT:B
Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (12x18)
pacchetto: 100-TBGA
Azione6.640
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)
MT29F32G08AFACAWP:C
Micron Technology Inc.

IC FLASH 32GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione7.088
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
BQ4010YMA-70N
Texas Instruments

IC NVSRAM 64KBIT 70NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.61", 15.49mm)
  • Supplier Device Package: 28-DIP Module (18.42x37.72)
pacchetto: 28-DIP Module (0.61", 15.49mm)
Azione5.184
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
28-DIP Module (0.61", 15.49mm)
28-DIP Module (18.42x37.72)
IS41LV16100B-50TL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione3.056
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
CY62167DV30LL-45ZXIT
Cypress Semiconductor Corp

IC SRAM 16MBIT 45NS 48TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione4.432
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT46V64M8P-75 IT:D TR
Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 750ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
pacchetto: 66-TSSOP (0.400", 10.16mm Width)
Azione2.100
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
133MHz
15ns
750ps
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
AT25HP512W2-10SI-2.7-T
Microchip Technology

IC EEPROM 512KBIT 10MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.295", 7.50mm Width)
Azione6.432
EEPROM
EEPROM
512Kb (64K x 8)
SPI
10MHz
10ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
AT25160N-10SC
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.080
EEPROM
EEPROM
16Kb (2K x 8)
SPI
3MHz
5ms
-
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot BQ4013YMA-70
Texas Instruments

IC NVSRAM 1MBIT 70NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.61", 15.49mm)
  • Supplier Device Package: 32-DIP Module (18.42x42.8)
pacchetto: 32-DIP Module (0.61", 15.49mm)
Azione5.248
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
32-DIP Module (0.61", 15.49mm)
32-DIP Module (18.42x42.8)
MT29F512G08CMECBH7-12:C TR
Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.672
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
7016L15J
IDT, Integrated Device Technology Inc

IC SRAM 144KBIT 15NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 144Kb (16K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
pacchetto: 68-LCC (J-Lead)
Azione7.232
SRAM
SRAM - Dual Port, Asynchronous
144Kb (16K x 9)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
AT28C010E-15JU
Microchip Technology

IC EEPROM 1MBIT 150NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione7.616
EEPROM
EEPROM
1Mb (128K x 8)
Parallel
-
10ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
CY14B104NA-ZSP25XI
Cypress Semiconductor Corp

IC NVSRAM 4MBIT 25NS 54TSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: 54-TSOP (0.400", 10.16mm Width)
Azione7.376
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (256K x 16)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
71V30S35TF
IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
pacchetto: 64-LQFP
Azione4.144
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
35ns
35ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (10x10)
CY7C1041GE30-10VXIT
Cypress Semiconductor Corp

ASYNC SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.312
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MX25L25635EZNI-12G
Macronix

IC FLASH 256MBIT 80MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: 300µs, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
pacchetto: 8-WDFN Exposed Pad
Azione3.216
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI
80MHz
300µs, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
hot W631GG8KB-15
Winbond Electronics

IC SDRAM 1GBIT 667MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-WBGA (10.5x8)
pacchetto: 78-TFBGA
Azione17.628
DRAM
SDRAM - DDR3
1Gb (128M x 8)
Parallel
667MHz
-
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-WBGA (10.5x8)
MT28EW128ABA1HPC-1SIT
Micron Technology Inc.

IC FLASH 128MBIT 70NS 64LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8, 8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 95ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-LBGA (11x13)
pacchetto: 64-LBGA
Azione5.136
FLASH
FLASH - NOR
128Mb (16M x 8, 8M x 16)
Parallel
-
60ns
95ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-LBGA (11x13)
24AA65/P
Microchip Technology

IC EEPROM 64KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione5.824
EEPROM
EEPROM
64Kb (8K x 8)
I2C
400kHz
5ms
900ns
1.8 V ~ 6 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
25LC080CT-I/MS
Microchip Technology

IC EEPROM 8KBIT 10MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione7.840
EEPROM
EEPROM
8Kb (1K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
S29GL064N90TAI043
Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione3.616
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
S98WS768P0GFW0160B
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
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pacchetto: -
Azione2.912
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W25Q32BVTBJG
Winbond Electronics

IC FLASH MEMORY 32MB

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pacchetto: -
Azione6.240
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S71PL032J40BAW070B
Cypress Semiconductor Corp

IC FLASH MEMORY SMD

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pacchetto: -
Azione2.656
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CG8217AAT
Cypress Semiconductor Corp

IC SRAM 16M PARALLEL 48VFBGA

  • Memory Type: -
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pacchetto: -
Azione5.552
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